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Results: 1-25/30
Authors:
Bayer, M
Forchel, A
Hawrylak, P
Fafard, S
Narvaez, G
Citation: M. Bayer et al., Excitonic states in In(Ga)As self-assembled quantum dots, PHYS ST S-B, 224(2), 2001, pp. 331-336
Authors:
Hinzer, K
Bayer, M
McCaffrey, JP
Hawrylak, P
Korkusinski, M
Stern, O
Wasilewski, ZR
Fafard, S
Forchel, A
Citation: K. Hinzer et al., Optical spectroscopy of electronic states in a single pair of vertically coupled self-assembled quantum dots, PHYS ST S-B, 224(2), 2001, pp. 385-392
Authors:
Hinzer, K
Hawrylak, P
Korkusinski, M
Fafard, S
Bayer, M
Stern, O
Gorbunov, A
Forchel, A
Citation: K. Hinzer et al., Optical spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As quantum dot- art. no. 075314, PHYS REV B, 6307(7), 2001, pp. 5314
Authors:
Bayer, M
Hawrylak, P
Hinzer, K
Fafard, S
Korkusinski, M
Wasilewski, ZR
Stern, O
Forchel, A
Citation: M. Bayer et al., Coupling and entangling of quantum states in quantum dot molecules, SCIENCE, 291(5503), 2001, pp. 451-453
Authors:
McCaffrey, JP
Robertson, MD
Poole, PJ
Riel, BJ
Fafard, S
Citation: Jp. Mccaffrey et al., Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates, J APPL PHYS, 90(4), 2001, pp. 1784-1787
Authors:
Allen, CN
Finnie, P
Raymond, S
Wasilewski, ZR
Fafard, S
Citation: Cn. Allen et al., Inhomogeneous broadening in quantum dots with ternary aluminum alloys, APPL PHYS L, 79(17), 2001, pp. 2701-2703
Authors:
Liu, HC
Gao, M
McCaffrey, J
Wasilewski, ZR
Fafard, S
Citation: Hc. Liu et al., Quantum dot infrared photodetectors, APPL PHYS L, 78(1), 2001, pp. 79-81
Authors:
Hinzer, K
Allen, CN
Lapointe, J
Picard, D
Wasilewski, ZR
Fafard, S
Thorpe, AJS
Citation: K. Hinzer et al., Widely tunable self-assembled quantum dot lasers, J VAC SCI A, 18(2), 2000, pp. 578-581
Authors:
Raymond, S
Fafard, S
Hinzer, K
Charbonneau, S
Merz, JL
Citation: S. Raymond et al., Temporal cross-section for carrier capture by self-assembled quantum dots, MICROEL ENG, 53(1-4), 2000, pp. 241-244
Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
Authors:
Perret, N
Morris, D
Franchomme-Fosse, L
Cote, R
Fafard, S
Aimez, V
Beauvais, J
Citation: N. Perret et al., Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots, PHYS REV B, 62(8), 2000, pp. 5092-5099
Authors:
Raymond, S
Hinzer, K
Fafard, S
Merz, JL
Citation: S. Raymond et al., Experimental determination of Auger capture coefficients in self-assembledquantum dots, PHYS REV B, 61(24), 2000, pp. R16331-R16334
Authors:
Bayer, M
Stern, O
Hawrylak, P
Fafard, S
Forchel, A
Citation: M. Bayer et al., Hidden symmetries in the energy levels of excitonic 'artificial atoms', NATURE, 405(6789), 2000, pp. 923-926
Authors:
McCaffrey, JP
Robertson, MD
Fafard, S
Wasilewski, ZR
Griswold, EM
Madsen, LD
Citation: Jp. Mccaffrey et al., Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy, J APPL PHYS, 88(5), 2000, pp. 2272-2277
Authors:
Hinzer, K
Lapointe, J
Feng, Y
Delage, A
Fafard, S
SpringThorpe, AJ
Griswold, EM
Citation: K. Hinzer et al., Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots, J APPL PHYS, 87(3), 2000, pp. 1496-1502
Authors:
Piva, PG
Goldberg, RD
Mitchell, IV
Labrie, D
Leon, R
Charbonneau, S
Wasilewski, ZR
Fafard, S
Citation: Pg. Piva et al., Enhanced degradation resistance of quantum dot lasers to radiation damage, APPL PHYS L, 77(5), 2000, pp. 624-626
Authors:
Dubowski, JJ
Allen, CN
Fafard, S
Citation: Jj. Dubowski et al., Laser-induced InAs/GaAs quantum dot intermixing, APPL PHYS L, 77(22), 2000, pp. 3583-3585
Authors:
Fafard, S
Citation: S. Fafard, Near-surface InAs/GaAs quantum dots with sharp electronic shells, APPL PHYS L, 76(19), 2000, pp. 2707-2709
Authors:
Fafard, S
Spanner, M
McCaffrey, JP
Wasilewski, ZR
Citation: S. Fafard et al., Coupled InAs/GaAs quantum dots with well-defined electronic shells, APPL PHYS L, 76(16), 2000, pp. 2268-2270
Authors:
Fafard, S
Wasilewski, ZR
Allen, CN
Picard, D
Piva, PG
McCaffrey, JP
Citation: S. Fafard et al., Self-assembled quantum dots: five years later, SUPERLATT M, 25(1-2), 1999, pp. 87-96
Authors:
Yang, F
Hinzer, K
Allen, CN
Fafard, S
Aers, GC
Feng, Y
McCaffrey, J
Charbonneau, S
Citation: F. Yang et al., Quantum dot p-i-n structure in an electric field, SUPERLATT M, 25(1-2), 1999, pp. 419-424
Authors:
Leon, R
Marcinkevicius, S
Liao, XZ
Zou, J
Cockayne, DJH
Fafard, S
Citation: R. Leon et al., Ensemble interactions in strained semiconductor quantum dots, PHYS REV B, 60(12), 1999, pp. R8517-R8520
Authors:
Fafard, S
Wasilewski, ZR
Allen, CN
Picard, D
Spanner, M
McCaffrey, JP
Piva, PG
Citation: S. Fafard et al., Manipulating the energy levels of semiconductor quantum dots, PHYS REV B, 59(23), 1999, pp. 15368-15373
Authors:
Raymond, S
Guo, X
Merz, JL
Fafard, S
Citation: S. Raymond et al., Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy, PHYS REV B, 59(11), 1999, pp. 7624-7631
Authors:
Leon, R
Lobo, C
Liao, XZ
Zou, J
Cockayne, DJH
Fafard, S
Citation: R. Leon et al., Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots, THIN SOL FI, 357(1), 1999, pp. 40-45
Authors:
Wasilewski, ZR
Fafard, S
McCaffrey, JP
Citation: Zr. Wasilewski et al., Size and shape engineering of vertically stacked self-assembled quantum dots, J CRYST GR, 202, 1999, pp. 1131-1135