Authors:
Santucci, S
Guerrieri, S
Passacantando, M
Picozzi, P
Fama, F
Nardi, N
Basile, F
Citation: S. Santucci et al., Effects of rapid thermal treatments on the electrical properties of thin SiO2 gate oxide for DRAM p-channel MOS transistors, J NON-CRYST, 280(1-3), 2001, pp. 54-58