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Citation: S. Bae et al., Chemical bonding and stability of 50 degrees C plasma-deposited silicon nitrides, EL SOLID ST, 3(1), 2000, pp. 41-43

Authors: Bae, S Farber, DG Fonash, SJ

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Authors: Farber, DG Bae, S Okandan, M Reber, DM Kuzma, T Fonash, SJ

Citation: Dg. Farber et al., Pathway to depositing device-quality 50 degrees C silicon nitride in a high-density plasma system, J ELCHEM SO, 146(6), 1999, pp. 2254-2257