Authors:
Fay, JL
Beluch, J
Despax, B
Sarrabayrouse, G
Citation: Jl. Fay et al., Positive charge increase in plasma deposited oxides induced by low pressure chemical vapor deposition of silicon nitride, JPN J A P 1, 40(1), 2001, pp. 7-11
Authors:
Fay, JL
Beluch, J
Despax, B
Bafleur, M
Sarrabayrouse, G
Citation: Jl. Fay et al., Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant, MICROEL REL, 40(4-5), 2000, pp. 593-596
Authors:
Fay, JL
Beluch, J
Allirand, L
Brosset, D
Despax, B
Bafleur, M
Sarrabayrouse, G
Citation: Jl. Fay et al., Comprehensive analysis of an isolation area obtained by local oxidation ofsilicon without field implant, JPN J A P 1, 38(9A), 1999, pp. 5012-5017