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Results: 1-19 |
Results: 19
Electroless plating Ni induced crystallization of amorphous silicon thin films
Authors: Chen, YC Wu, YCS Chao, CW Hu, GR Feng, MS
Citation: Yc. Chen et al., Electroless plating Ni induced crystallization of amorphous silicon thin films, JPN J A P 1, 40(9A), 2001, pp. 5244-5246
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
Authors: Lee, YP Tsai, MS Hu, TC Dai, BT Feng, MS
Citation: Yp. Lee et al., Selective copper metallization by electrochemical contact displacement with amorphous silicon film, EL SOLID ST, 4(7), 2001, pp. C47-C49
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
Authors: Chang, SC Shieh, JM Lin, KC Dai, BT Wang, TC Chen, CF Feng, MS Li, YH Lu, CP
Citation: Sc. Chang et al., Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper, J VAC SCI B, 19(3), 2001, pp. 767-773
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
Authors: Lee, HJ Lin, EK Wu, WL Fanconi, BM Lan, JK Cheng, YL Liou, HC Wang, YL Feng, MS Chao, CG
Citation: Hj. Lee et al., X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films, J ELCHEM SO, 148(10), 2001, pp. F195-F199
Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper
Authors: Lin, JH Tsai, YY Chiu, SY Lee, TL Tsai, CM Chen, PH Lin, CC Feng, MS Kou, CS Shih, HC
Citation: Jh. Lin et al., Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper, THIN SOL FI, 377, 2000, pp. 592-596
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
Authors: Lan, JK Wang, YL Wu, YL Liou, HC Wang, JK Chiu, SY Cheng, YL Feng, MS
Citation: Jk. Lan et al., Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric, THIN SOL FI, 377, 2000, pp. 776-780
Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide
Authors: Lin, CF Tseng, WT Feng, MS
Citation: Cf. Lin et al., Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide, J APPL PHYS, 87(6), 2000, pp. 2808-2815
Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition
Authors: Chen, YC Wu, YCS Tung, IC Chao, CW Feng, MS Chen, HC
Citation: Yc. Chen et al., Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition, APPL PHYS L, 77(16), 2000, pp. 2521-2523
Improved contact performance of GaN film using Si diffusion
Authors: Lin, CF Cheng, HC Chi, GC Bu, CJ Feng, MS
Citation: Cf. Lin et al., Improved contact performance of GaN film using Si diffusion, APPL PHYS L, 76(14), 2000, pp. 1878-1880
Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
Authors: Chen, YC Yang, MZ Tung, IC Chen, MP Feng, MS Cheng, HC Chang, CY
Citation: Yc. Chen et al., Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide, JPN J A P 1, 38(7A), 1999, pp. 4226-4232
Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory
Authors: Lin, CF Tung, IC Feng, MS
Citation: Cf. Lin et al., Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory, JPN J A P 1, 38(11), 1999, pp. 6253-6257
Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application
Authors: Tsan, CC Wang, YL Wu, YL Dun, JW Huan, YS Feng, MS Chiu, SY
Citation: Cc. Tsan et al., Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application, J VAC SCI B, 17(5), 1999, pp. 2341-2344
Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors
Authors: Lin, CF Tseng, WT Feng, MS Wang, YL
Citation: Cf. Lin et al., Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors, J VAC SCI B, 17(4), 1999, pp. 1456-1463
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
Authors: Hu, TC Chiu, SY Dai, BT Tsai, MS Tung, IC Feng, MS
Citation: Tc. Hu et al., Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing, MATER CH PH, 61(2), 1999, pp. 169-171
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
Authors: Lin, CF Tseng, WT Feng, MS Wang, YL
Citation: Cf. Lin et al., A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization, THIN SOL FI, 347(1-2), 1999, pp. 248-252
Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish
Authors: Lin, CF Tseng, WT Feng, MS
Citation: Cf. Lin et al., Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish, J ELCHEM SO, 146(5), 1999, pp. 1984-1990
Optimization of multilayer thin film passivation processes for improving cache memory device performance
Authors: Lin, CF Tseng, WT Feng, MS
Citation: Cf. Lin et al., Optimization of multilayer thin film passivation processes for improving cache memory device performance, J ELCHEM SO, 146(4), 1999, pp. 1510-1516
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
Authors: Chang, TC Liu, PT Mor, YS Sze, SM Yang, YL Feng, MS Pan, FM Dai, BT Chang, CY
Citation: Tc. Chang et al., The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment, J ELCHEM SO, 146(10), 1999, pp. 3802-3806
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
Authors: Lin, CF Tseng, WT Feng, MS
Citation: Cf. Lin et al., Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance, JPN J A P 1, 37(12A), 1998, pp. 6364-6368
Risultati: 1-19 |