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Citation: Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227

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Authors: Leshko, AY Lyutetskii, AV Pikhtin, NA Skrynnikov, GV Sokolova, ZN Tarasov, IS Fetisova, NV

Citation: Ay. Leshko et al., On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers, SEMICONDUCT, 34(12), 2000, pp. 1397-1401

Authors: Pikhtin, NA Il'in, YV Leshko, AY Lyutetskii, AV Stankevich, AL Tarasov, IS Fetisova, NV

Citation: Na. Pikhtin et al., High-power broad-band single-mode InGaAsP/InP superluminescent diode, TECH PHYS L, 25(8), 1999, pp. 598-600