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Citation: Aj. Flewitt et al., Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition, THIN SOL FI, 383(1-2), 2001, pp. 172-177

Authors: Conway, NMJ Ferrari, AC Flewitt, AJ Robertson, J Milne, WI Tagliaferro, A Beyer, W

Citation: Nmj. Conway et al., Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon, DIAM RELAT, 9(3-6), 2000, pp. 765-770

Authors: Maeng, SL Uchikoga, S Clough, FJ Tagliaferro, A Flewitt, AJ Robertson, J Milne, WI

Citation: Sl. Maeng et al., A carbon based bottom gate thin film transistor, DIAM RELAT, 9(3-6), 2000, pp. 805-810

Authors: Flewitt, AJ Robertson, J Milne, WI

Citation: Aj. Flewitt et al., Experimental evidence for an inhomogeneous surface dangling bond limited growth mechanism in a-Si : H, J NON-CRYST, 266, 2000, pp. 74-78

Authors: Ilie, A Hart, A Flewitt, AJ Robertson, J Milne, WI

Citation: A. Ilie et al., Effect of work function and surface microstructure on field emission of tetrahedral amorphous carbon, J APPL PHYS, 88(10), 2000, pp. 6002-6010

Authors: Flewitt, AJ Robertson, J Milne, WI

Citation: Aj. Flewitt et al., Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy, J APPL PHYS, 85(12), 1999, pp. 8032-8039