Authors: Florescu, DI Asnin, VA Mourokh, LG Pollak, FH Molnar, RJ

Citation: Di. Florescu et al., Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope, MRS I J N S, 5, 2000, pp. NIL_288-NIL_293

Authors: Florescu, DI Cappelletti, RL

Citation: Di. Florescu et Rl. Cappelletti, Optical anisotropy in thermally evaporated a-Ge0.95Sn0.05Se2 columnar thinfilms, J NON-CRYST, 265(1-2), 2000, pp. 143-148

Authors: Florescu, DI Asnin, VM Pollak, FH Molnar, RJ Wood, CEC

Citation: Di. Florescu et al., High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence, J APPL PHYS, 88(6), 2000, pp. 3295-3300

Authors: Florescu, DI Asnin, VM Pollak, FH Jones, AM Ramer, JC Schurman, MJ Ferguson, I

Citation: Di. Florescu et al., Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy, APPL PHYS L, 77(10), 2000, pp. 1464-1466

Authors: Florescu, DI Cappelletti, RL

Citation: Di. Florescu et Rl. Cappelletti, Optical anisotropy in pulsed laser deposited a-GeSe2 thin films, J NON-CRYST, 246(1-2), 1999, pp. 150-154

Authors: Florescu, DI Cappelletti, RL

Citation: Di. Florescu et Rl. Cappelletti, Photobleaching in a g-Ge0.27Sn0.03Se0.7 thin film, J NON-CRYST, 243(2-3), 1999, pp. 204-208