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Results:
1-15
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Results: 15
Authors:
DiMatteo, RS
Greiff, P
Finberg, SL
Young-Waithe, KA
Choy, HKH
Masaki, MM
Fonstad, CG
Citation: Rs. Dimatteo et al., Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap, APPL PHYS L, 79(12), 2001, pp. 1894-1896
Authors:
Pan, JL
Fonstad, CG
Citation: Jl. Pan et Cg. Fonstad, Theory, fabrication and characterization of quantum well infrared photodetectors, MAT SCI E R, 28(3-4), 2000, pp. 65-147
Authors:
Pan, JL
Fonstad, CG
Matney, K
Citation: Jl. Pan et al., Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques, J CRYST GR, 219(4), 2000, pp. 335-345
Authors:
Pan, JL
Fonstad, CG
Citation: Jl. Pan et Cg. Fonstad, Comparison of hole and electron intersubband absorption strengths for quantum well infrared photodetectors, IEEE DEVICE, 47(7), 2000, pp. 1325-1329
Authors:
Pan, JL
Choy, HKH
Fonstad, CG
Citation: Jl. Pan et al., Very large radiative transfer over small distances from a black body for thermophotovoltaic applications, IEEE DEVICE, 47(1), 2000, pp. 241-249
Authors:
Postigo, PA
Fonstad, CG
Choi, S
Goodhue, WD
Citation: Pa. Postigo et al., Solid-source molecular-beam epitaxy for monolithic integration of laser emitters and photodetectors on GaAs chips, APPL PHYS L, 77(23), 2000, pp. 3842-3844
Authors:
Maj, T
Kirk, AG
Plant, DV
Ahadian, JF
Fonstad, CG
Lear, KL
Tatah, K
Robinson, MS
Trezza, JA
Citation: T. Maj et al., Interconnection of a two-dimensional array of vertical-cavity surface-emitting lasers to a receiver array by means of a fiber image guide, APPL OPTICS, 39(5), 2000, pp. 683-689
Authors:
Hall, DA
Shoop, BL
Loy, JR
Ressler, EK
Ahadian, JF
Fonstad, CG
Citation: Da. Hall et al., Performance of GaAs smart pixel components before and after monolithic integration of InGaP LEDs using Epitaxy-on-Electronics technology, OPT EXPRESS, 4(4), 1999, pp. 151-160
Authors:
Postigo, PA
Lullo, G
Choy, KH
Fonstad, CG
Citation: Pa. Postigo et al., Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source, J VAC SCI B, 17(3), 1999, pp. 1281-1284
Authors:
London, JM
Loomis, AH
Ahadian, JF
Fonstad, CG
Citation: Jm. London et al., Preparation of silicon-on-gallium arsenide wafers for monolithic optoelectronic integration, IEEE PHOTON, 11(8), 1999, pp. 958-960
Authors:
Knodl, T
Choy, HKH
Pan, JL
King, R
Jager, R
Lullo, G
Ahadian, JF
Ram, RJ
Fonstad, CG
Ebeling, KJ
Citation: T. Knodl et al., RCE photodetectors based on VCSEL structures, IEEE PHOTON, 11(10), 1999, pp. 1289-1291
Authors:
Goodhue, WD
Royter, Y
Mull, DE
Choi, SS
Fonstad, CG
Citation: Wd. Goodhue et al., Bromine ion-beam-assisted etching of III-V semiconductors, J ELEC MAT, 28(4), 1999, pp. 364-368
Authors:
Pan, JL
Fonstad, CG
Citation: Jl. Pan et Cg. Fonstad, Physical model of depletion and accumulation in quantum-well infrared photodetectors, IEEE J Q EL, 35(11), 1999, pp. 1673-1684
Authors:
London, JM
Postigo, PA
Fonstad, CG
Citation: Jm. London et al., Quantum well heterostructures grown by molecular beam epitaxy on silicon-on-gallium arsenide substrates, APPL PHYS L, 75(22), 1999, pp. 3452-3454
Authors:
Ahadian, JF
Fonstad, CG
Citation: Jf. Ahadian et Cg. Fonstad, Epitaxy-on-electronics technology for monolithic optoelectronic integration: foundations, development, and status, OPT ENG, 37(12), 1998, pp. 3161-3174
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