Authors: Fortin, V Gujrathi, SC Gagnon, G Gauvin, R Currie, JF Ouellet, L Tremblay, Y

Citation: V. Fortin et al., Effect of in situ plasma oxidation of TiN diffusion barrier for AlSiCu/TiN/Ti metallization structure of integrated circuits, J VAC SCI B, 17(2), 1999, pp. 423-431