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Results:
1-22
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Results: 22
Authors:
Birkholz, M
Conrad, E
Fuhs, W
Citation: M. Birkholz et al., Crystallinity of thin silicon films deposited at low temperatures: Combined effect of biasing and structuring the substrate, JPN J A P 1, 40(6A), 2001, pp. 4176-4180
Authors:
Birkholz, M
Selle, B
Fuhs, W
Christiansen, S
Strunk, HP
Reich, R
Citation: M. Birkholz et al., Amorphous-crystalline phase transition during the growth of thin films: The case of microcrystalline silicon - art. no. 085402, PHYS REV B, 6408(8), 2001, pp. 5402
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Bohne, W
Fuhs, W
Rohrich, J
Selle, B
Sieber, I
Citation: Fl. Martinez et al., Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320, PHYS REV B, 6324(24), 2001, pp. 5320
Authors:
Platen, J
Selle, B
Sieber, I
Brehme, S
Zeimer, U
Fuhs, W
Citation: J. Platen et al., Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition, THIN SOL FI, 381(1), 2001, pp. 22-30
Authors:
Fuhs, W
Kanschat, P
Lips, K
Citation: W. Fuhs et al., Bandtails and defects in microcrystalline silicon (mu c-Si : H), J VAC SCI B, 18(3), 2000, pp. 1792-1795
Authors:
Brehme, S
Kanschat, P
Lips, K
Sieber, I
Fuhs, W
Citation: S. Brehme et al., Electronic properties of highly P and B doped thin Si layers grown by ECR-CVD, MAT SCI E B, 69, 2000, pp. 232-237
Authors:
Bohne, W
Fuhs, W
Rohrich, J
Selle, B
Gonzalez-Diaz, G
Martil, I
Martinez, FL
del Prado, A
Citation: W. Bohne et al., Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy, SURF INT AN, 30(1), 2000, pp. 534-537
Authors:
Muller, R
Kanschat, P
von Aichberger, S
Lips, K
Fuhs, W
Citation: R. Muller et al., Identification of transport and recombination paths in homo and heterojunction silicon solar cells by electrically detected magnetic resonance, J NON-CRYST, 266, 2000, pp. 1124-1128
Authors:
Rappich, J
Lust, S
Sieber, I
Henrion, W
Dohrmann, JK
Fuhs, W
Citation: J. Rappich et al., Light trapping by formation of nanometer diameter wire-like structures on mu c-Si thin films, J NON-CRYST, 266, 2000, pp. 284-289
Authors:
Kanschat, P
Lips, K
Fuhs, W
Citation: P. Kanschat et al., Identification of non-radiative recombination paths in microcrystalline silicon (mu c-Si : H), J NON-CRYST, 266, 2000, pp. 524-528
Authors:
Lengsfeld, P
Nickel, NH
Fuhs, W
Citation: P. Lengsfeld et al., The role of hydrogen in the process of successive laser crystallization ofhydrogenated amorphous silicon, J NON-CRYST, 266, 2000, pp. 659-663
Authors:
Birkholz, M
Selle, B
Conrad, E
Lips, K
Fuhs, W
Citation: M. Birkholz et al., Evolution of structure in thin microcrystalline silicon films grown by electron-cyclotron resonance chemical vapor deposition, J APPL PHYS, 88(7), 2000, pp. 4376-4379
Authors:
Albohn, J
Fussel, W
Sinh, ND
Kliefoth, K
Fuhs, W
Citation: J. Albohn et al., Capture cross sections of defect states at the Si/SiO2 interface, J APPL PHYS, 88(2), 2000, pp. 842-849
Authors:
Lengsfeld, P
Nickel, NH
Fuhs, W
Citation: P. Lengsfeld et al., Step-by-step excimer laser induced crystallization of a-Si : H, APPL PHYS L, 76(13), 2000, pp. 1680-1682
Authors:
Bresler, MS
Fuhs, W
Gregorkiewicz, T
Gusev, OB
Pak, PE
Terukov, EI
Tsendin, KD
Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of excitation of erbium electroluminescence in amorphous silicon, PHYSICA B, 274, 1999, pp. 354-357
Authors:
Albohn, J
Fussel, W
Sinh, ND
Kliefoth, K
Flietner, H
Fuhs, W
Citation: J. Albohn et al., Two types of traps at the Si/SiO2 interface characterized by their cross sections, MICROEL ENG, 48(1-4), 1999, pp. 159-162
Authors:
Fenske, F
Fuhs, W
Nebauer, E
Schopke, A
Selle, B
Sieber, I
Citation: F. Fenske et al., Transparent conductive ZnO : Al films by reactive co-sputtering from separate metallic Zn and Al targets, THIN SOL FI, 344, 1999, pp. 130-133
Authors:
Brehme, S
Fenske, F
Fuhs, W
Nebauer, E
Poschenrieder, M
Selle, B
Sieber, I
Citation: S. Brehme et al., Free-carrier plasma resonance effects and electron transport in reactivelysputtered degenerate ZnO : Al films, THIN SOL FI, 342(1-2), 1999, pp. 167-173
Authors:
Hilmer, F
Vajen, K
Ratka, A
Ackermann, H
Fuhs, W
Melsheimer, O
Citation: F. Hilmer et al., Numerical solution and validation of a dynamic model of solar collectors working with varying fluid flow rate, SOLAR ENERG, 65(5), 1999, pp. 305-321
Authors:
Eisenbeiss, G
Fuhs, W
Hertlein, H
Luther, J
Nitsch, J
Schmid, J
Wittwer, V
Citation: G. Eisenbeiss et al., Basis for sustainability: Renewable energy sources, BRENN WARME, 51(5-6), 1999, pp. 40-45
Authors:
Kudoyarova, VK
Kuznetsov, AN
Terukov, EI
Gusev, OB
Kudryavtsev, YA
Ber, BY
Gusinskii, GM
Fuhs, W
Weiser, G
Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
Authors:
Lengsfeld, P
Brehme, S
Ehlers, G
Lange, H
Stusser, N
Tomm, Y
Fuhs, W
Citation: P. Lengsfeld et al., Anomalous Hall effect in beta-FeSi2, PHYS REV B, 58(24), 1998, pp. 16154-16159
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