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Results: 1-25/53
Authors:
Nukaga, N
Mitsuya, M
Suzuki, T
Nishi, Y
Fujimoto, M
Funakubo, H
Citation: N. Nukaga et al., Local epitaxial growth of (103) one-axis-oriented SrBi2Ta2O9 thin films prepared at low deposition temperature by metalorganic chemical vapor deposition and their electrical properties, JPN J A P 1, 40(9B), 2001, pp. 5595-5598
Authors:
Aratani, M
Nagashima, K
Funakubo, H
Citation: M. Aratani et al., Preparation of Pb(Zr-x,Ti1-x)O-3 thin films by source gas pulse-introducedmetalorganic chemical vapor deposition, JPN J A P 1, 40(6A), 2001, pp. 4126-4130
Authors:
Mitsuya, M
Nukaga, N
Saito, K
Osada, M
Funakubo, H
Citation: M. Mitsuya et al., Low temperature direct crystallization of SrBi2(Ta1-xNbx)(2)O-9 thin filmsby thermal metalorganic chemical vapor deposition and their properties, JPN J A P 1, 40(5A), 2001, pp. 3337-3342
Authors:
Sakai, T
Watanabe, T
Cho, Y
Matsuura, K
Funakubo, H
Citation: T. Sakai et al., Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films, JPN J A P 1, 40(11), 2001, pp. 6481-6486
Authors:
Osada, M
Kakihana, M
Mitsuya, M
Watanabe, T
Funakubo, H
Citation: M. Osada et al., Raman spectroscopic fingerprint of ferroelectric SrBi2Ta2O9 thin films: A rapid distinction method for fluorite and pyrochlore phases, JPN J A P 2, 40(8B), 2001, pp. L891-L893
Authors:
Mitsuya, M
Nukaga, N
Watanabe, T
Funakubo, H
Saito, K
Citation: M. Mitsuya et al., Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature, JPN J A P 2, 40(7B), 2001, pp. L758-L760
Authors:
Akiyama, K
Ohya, S
Takano, H
Kieda, N
Funakubo, H
Citation: K. Akiyama et al., Growth of beta-FeSi2 thin film on Si (111) by metal-organic chemical vapordeposition, JPN J A P 2, 40(5A), 2001, pp. L460-L462
Authors:
Aratani, M
Ozeki, T
Funakubo, H
Citation: M. Aratani et al., Low temperature deposition of Pb(Zr,Ti)O-3 film by source gas pulse-introduced metalorganic chemical vapor deposition, JPN J A P 2, 40(4A), 2001, pp. L343-L345
Authors:
Saito, K
Ishikawa, K
Saiki, A
Yamaji, I
Akai, T
Funakubo, H
Citation: K. Saito et al., Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD, INTEGR FERR, 33(1-4), 2001, pp. 59-69
Authors:
Liu, XD
Funakubo, H
Noda, S
Komiyama, H
Citation: Xd. Liu et al., Internal microstructure and formation mechanism of surface protrusions in Pb-Ti-Nb-O thin films prepared by MOCVD, CHEM VAPOR, 7(6), 2001, pp. 253-259
Authors:
Sekiguchi, N
Komeda, T
Funakubo, H
Chabicovsky, R
Nicolics, J
Stangl, G
Citation: N. Sekiguchi et al., Microsensor for the measurement of water content in the human skin, SENS ACTU-B, 78(1-3), 2001, pp. 326-330
Authors:
Nukaga, N
Mitsuya, M
Funakubo, H
Citation: N. Nukaga et al., Chemical stability of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition, IEICE TR EL, E84C(6), 2001, pp. 791-795
Authors:
Watanabe, T
Funakubo, H
Saito, K
Citation: T. Watanabe et al., Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition, J MATER RES, 16(1), 2001, pp. 303-307
Authors:
Ishikawa, K
Watanabe, T
Funakubo, H
Citation: K. Ishikawa et al., Preparation of Bi2WO6 thin films by metalorganic chemical vapor depositionand their electrical properties, THIN SOL FI, 392(1), 2001, pp. 128-133
Authors:
Higashi, N
Watanabe, T
Saito, K
Yamaji, I
Akai, T
Funakubo, H
Citation: N. Higashi et al., Crystal structure comparison between conductive SrRuO3 and CaRuO3 thin films, J CRYST GR, 229(1), 2001, pp. 450-456
Authors:
Watanabe, T
Funakubo, H
Mizuhira, M
Osada, M
Citation: T. Watanabe et al., Site definition and characterization of La-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition, J APPL PHYS, 90(12), 2001, pp. 6533-6535
Authors:
Nagashima, K
Aratani, M
Funakubo, H
Citation: K. Nagashima et al., Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1-x)O-3 thin films prepared by metalorganic chemical vapor deposition, J APPL PHYS, 89(8), 2001, pp. 4517-4522
Authors:
Watanabe, T
Saiki, A
Saito, K
Funakubo, H
Citation: T. Watanabe et al., Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition, J APPL PHYS, 89(7), 2001, pp. 3934-3938
Authors:
Liu, XD
Funakubo, H
Noda, S
Komiyama, H
Citation: Xd. Liu et al., Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition, J ELCHEM SO, 148(3), 2001, pp. C227-C230
Authors:
Aratani, M
Oikawa, T
Ozeki, T
Funakubo, H
Citation: M. Aratani et al., Epitaxial-grade polycrystalline Pb(Zr,Ti)O-3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition, APPL PHYS L, 79(7), 2001, pp. 1000-1002
Authors:
Mitsuya, M
Nukaga, N
Watanabe, T
Funakubo, H
Saito, K
Osada, M
Citation: M. Mitsuya et al., Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)(2)O-9-Bi3TiTaO9 solid solution thin film, APPL PHYS L, 79(13), 2001, pp. 2067-2069
Authors:
Saito, K
Mitsuya, M
Nukaga, N
Yamaji, I
Akai, T
Funakubo, H
Citation: K. Saito et al., Method of distinguishing SrBi2Ta2O9 phase from fluorite phase using X-ray diffraction reciprocal space mapping, JPN J A P 1, 39(9B), 2000, pp. 5489-5495
Authors:
Nukaga, N
Mitsuya, M
Funakubo, H
Citation: N. Nukaga et al., Low-temperature preparation of SrBi2Ta2O9 thin films by electron cyclotronresonance plasma-enhanced metalorganic chemical vapor deposition and theirelectrical properties, JPN J A P 1, 39(9B), 2000, pp. 5496-5500
Authors:
Watanabe, T
Funakubo, H
Citation: T. Watanabe et H. Funakubo, Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method, JPN J A P 1, 39(9A), 2000, pp. 5211-5216
Authors:
Odagawa, H
Cho, Y
Funakubo, H
Nagashima, K
Citation: H. Odagawa et al., Simultaneous observation of ferroelectric domain patterns by scanning nonlinear dielectric microscope and surface morphology by atomic force microscope, JPN J A P 1, 39(6B), 2000, pp. 3808-3810