Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A

Citation: As. Vedeneev et al., EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL, JETP letters, 60(6), 1994, pp. 475-480

Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A

Citation: As. Vedeneev et al., FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION, Applied physics letters, 64(19), 1994, pp. 2566-2568

Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG MODELLI A RYLKOV VV TKACH YY

Citation: As. Vedeneev et al., CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B, JETP letters, 57(10), 1993, pp. 662-666