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Results: 1-9 |
Results: 9
CONDITIONS UNDER WHICH HETEROGENEOUS CHARGE-TRANSFER RATE CONSTANTS CAN BE EXTRACTED FROM TRANSIENT PHOTOLUMINESCENCE DECAY DATA OF SEMICONDUCTOR LIQUID CONTACTS AS DETERMINED BY 2-DIMENSIONAL TRANSPORT MODELING/
Authors: ANZ SJ KRUGER O LEWIS NS GAJEWSKI H
Citation: Sj. Anz et al., CONDITIONS UNDER WHICH HETEROGENEOUS CHARGE-TRANSFER RATE CONSTANTS CAN BE EXTRACTED FROM TRANSIENT PHOTOLUMINESCENCE DECAY DATA OF SEMICONDUCTOR LIQUID CONTACTS AS DETERMINED BY 2-DIMENSIONAL TRANSPORT MODELING/, JOURNAL OF PHYSICAL CHEMISTRY B, 102(29), 1998, pp. 5625-5640
GLOBAL BEHAVIOR OF A REACTION-DIFFUSION SYSTEM MODELING CHEMOTAXIS
Authors: GAJEWSKI H ZACHARIAS K
Citation: H. Gajewski et K. Zacharias, GLOBAL BEHAVIOR OF A REACTION-DIFFUSION SYSTEM MODELING CHEMOTAXIS, Mathematische Nachrichten, 195, 1998, pp. 77-114
ON THE DISCRETIZATION OF VANROOSBROECKS EQUATIONS WITH MAGNETIC-FIELD
Authors: GAJEWSKI H GARTNER K
Citation: H. Gajewski et K. Gartner, ON THE DISCRETIZATION OF VANROOSBROECKS EQUATIONS WITH MAGNETIC-FIELD, Zeitschrift fur angewandte Mathematik und Mechanik, 76(5), 1996, pp. 247-264
LOW-TEMPERATURE IMPURITY BREAKDOWN IN SEMICONDUCTORS - AN APPROACH TOWARDS EFFICIENT DEVICE SIMULATION
Authors: KUNZ RE SCHOLL E NURNBERG R GAJEWSKI H
Citation: Re. Kunz et al., LOW-TEMPERATURE IMPURITY BREAKDOWN IN SEMICONDUCTORS - AN APPROACH TOWARDS EFFICIENT DEVICE SIMULATION, Solid-state electronics, 39(8), 1996, pp. 1155-1164
REACTION-DIFFUSION PROCESSES OF ELECTRICALLY CHARGED SPECIES
Authors: GAJEWSKI H GROGER K
Citation: H. Gajewski et K. Groger, REACTION-DIFFUSION PROCESSES OF ELECTRICALLY CHARGED SPECIES, Mathematische Nachrichten, 177, 1996, pp. 109-130
ON A VARIANT OF MONOTONICITY AND ITS APPLICATION TO DIFFERENTIAL-EQUATIONS
Authors: GAJEWSKI H
Citation: H. Gajewski, ON A VARIANT OF MONOTONICITY AND ITS APPLICATION TO DIFFERENTIAL-EQUATIONS, Nonlinear analysis, 22(1), 1994, pp. 73-80
ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR-DEVICES
Authors: GAJEWSKI H
Citation: H. Gajewski, ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR-DEVICES, Mathematical models and methods in applied sciences, 4(1), 1994, pp. 121-133
COMPUTER-SIMULATION OF THE PHOTOLUMINESCENCE DECAY AT THE GAAS ELECTROLYTE JUNCTION .1. THE INFLUENCE OF THE EXCITATION INTENSITY AT THE FLAT-BAND CONDITION
Authors: KRUGER O JUNG C GAJEWSKI H
Citation: O. Kruger et al., COMPUTER-SIMULATION OF THE PHOTOLUMINESCENCE DECAY AT THE GAAS ELECTROLYTE JUNCTION .1. THE INFLUENCE OF THE EXCITATION INTENSITY AT THE FLAT-BAND CONDITION, Journal of physical chemistry, 98(48), 1994, pp. 12653-12662
COMPUTER-SIMULATION OF THE PHOTOLUMINESCENCE DECAY AT THE GAAS ELECTROLYTE JUNCTION .2. THE INFLUENCE OF THE EXCITATION INTENSITY UNDER DEPLETION LAYER CONDITIONS
Authors: KRUGER O JUNG C GAJEWSKI H
Citation: O. Kruger et al., COMPUTER-SIMULATION OF THE PHOTOLUMINESCENCE DECAY AT THE GAAS ELECTROLYTE JUNCTION .2. THE INFLUENCE OF THE EXCITATION INTENSITY UNDER DEPLETION LAYER CONDITIONS, Journal of physical chemistry, 98(48), 1994, pp. 12663-12669
Risultati: 1-9 |