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Results: 1-10 |
Results: 10
STUDY OF UNIFORM AND GRADED SIGE CHANNEL HETEROJUNCTION P-MOSFETS USING MONTE-CARLO SIMULATION
Authors: DOLLFUS P GALDIN S ARBEY ME HESTO P
Citation: P. Dollfus et al., STUDY OF UNIFORM AND GRADED SIGE CHANNEL HETEROJUNCTION P-MOSFETS USING MONTE-CARLO SIMULATION, Thin solid films, 294(1-2), 1997, pp. 259-262
MODELING OF GATE-INDUCED SPIN PRECESSION IN A STRIPED CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTOR
Authors: BOURNEL A DOLLFUS P GALDIN S MUSALEM FX HESTO P
Citation: A. Bournel et al., MODELING OF GATE-INDUCED SPIN PRECESSION IN A STRIPED CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTOR, Solid state communications, 104(2), 1997, pp. 85-89
OPERATION OF SIGE CHANNEL HETEROJUNCTION P-MOSFET
Authors: DOLLFUS P MUSALEM FX GALDIN S HESTO P
Citation: P. Dollfus et al., OPERATION OF SIGE CHANNEL HETEROJUNCTION P-MOSFET, Applied surface science, 102, 1996, pp. 259-262
TRANSIENT ANALYSIS OF CML INVERTER USING MONTE-CARLO SIMULATIONS
Authors: GALDIN S MUSALEM FX DOLLFUS P MOUIS M HESTO P
Citation: S. Galdin et al., TRANSIENT ANALYSIS OF CML INVERTER USING MONTE-CARLO SIMULATIONS, Solid-state electronics, 39(2), 1996, pp. 269-275
INFLUENCE OF BASE DOPANT OUT-DIFFUSION INTO THE EMITTER IN SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATIONS/
Authors: GALDIN S DOLLFUS P MOUIS M MEYER F HESTO P
Citation: S. Galdin et al., INFLUENCE OF BASE DOPANT OUT-DIFFUSION INTO THE EMITTER IN SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATIONS/, Journal of crystal growth, 157(1-4), 1995, pp. 231-235
STATIC AND DYNAMIC BEHAVIOR OF A SI SI0.8GE0.2/SI HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATION/
Authors: GALDIN S DOLLFUS P HESTO P
Citation: S. Galdin et al., STATIC AND DYNAMIC BEHAVIOR OF A SI SI0.8GE0.2/SI HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATION/, Journal of applied physics, 75(6), 1994, pp. 2963-2969
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
HIGH-FREQUENCY ANALYSIS OF FAST DEVICES USING SMALL-SIGNAL MONTE-CARLO SIMULATIONS - APPLICATION TO A 0.1 MU-M-GATE MODFET
Authors: DOLLFUS P GALDIN S BRISSET C HESTO P
Citation: P. Dollfus et al., HIGH-FREQUENCY ANALYSIS OF FAST DEVICES USING SMALL-SIGNAL MONTE-CARLO SIMULATIONS - APPLICATION TO A 0.1 MU-M-GATE MODFET, Journal de physique. III, 3(9), 1993, pp. 1713-1718
MONTE-CARLO STUDY OF 50 NM-LONG SINGLE AND DUAL-GATE MODFETS - SUPPRESSION OF SHORT-CHANNEL EFFECTS
Authors: DOLLFUS P HESTO P GALDIN S BRISSET C
Citation: P. Dollfus et al., MONTE-CARLO STUDY OF 50 NM-LONG SINGLE AND DUAL-GATE MODFETS - SUPPRESSION OF SHORT-CHANNEL EFFECTS, Journal de physique. III, 3(9), 1993, pp. 1719-1728
MONTE-CARLO STUDY OF THE NONSTATIONARY TRANSPORT IN SI-SIGE HJBTS
Authors: GALDIN S HESTO P DOLLFUS P PONE JF
Citation: S. Galdin et al., MONTE-CARLO STUDY OF THE NONSTATIONARY TRANSPORT IN SI-SIGE HJBTS, Semiconductor science and technology, 7(3B), 1992, pp. 540-542
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