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Results: 1-14 |
Results: 14
TILT EFFECT IN THE ELECTRON DRAG OF DISLOCATIONS IN METALS
Authors: KROKHIN AA GUMEN LN GALLIGAN JM
Citation: Aa. Krokhin et al., TILT EFFECT IN THE ELECTRON DRAG OF DISLOCATIONS IN METALS, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(2), 1998, pp. 497-506
CHAOTIC EFFECTS IN ELECTRON DRAG PROCESSES IN METALS
Authors: GALLIGAN JM GUMEN LN KRIVOSHEY IV KROKHIN AA LUNAACOSTA GA
Citation: Jm. Galligan et al., CHAOTIC EFFECTS IN ELECTRON DRAG PROCESSES IN METALS, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(2), 1998, pp. 507-521
THE INFLUENCE OF QUENCHING ON THE DUCTILE TO BRITTLE TRANSITION IN MILD-STEEL
Authors: MCKRELL TJ GUPTA H GALLIGAN JM
Citation: Tj. Mckrell et al., THE INFLUENCE OF QUENCHING ON THE DUCTILE TO BRITTLE TRANSITION IN MILD-STEEL, Scripta materialia, 39(2), 1998, pp. 213-215
IN-SITU ULTRAVIOLET ILLUMINATION OF POROUS SILICON DURING SCANNING-TUNNELING-MICROSCOPY
Authors: SCHWALL D OTTER FA GALLIGAN JM
Citation: D. Schwall et al., IN-SITU ULTRAVIOLET ILLUMINATION OF POROUS SILICON DURING SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2127-2129
CREEP AT LOW-TEMPERATURES - UNZIPPING OF DISLOCATIONS, INERTIA, AND CRITICALITY PROCESSES
Authors: VIGUERASSANTIAGO E KROKHIN AA MCKRELL T GALLIGAN JM
Citation: E. Viguerassantiago et al., CREEP AT LOW-TEMPERATURES - UNZIPPING OF DISLOCATIONS, INERTIA, AND CRITICALITY PROCESSES, Physica. A, 258(1-2), 1998, pp. 11-16
POROUS SILICON PHOTOLUMINESCENCE AND QUANTUM CONFINEMENT
Authors: SCHWALL D OTTER FA GALLIGAN JM
Citation: D. Schwall et al., POROUS SILICON PHOTOLUMINESCENCE AND QUANTUM CONFINEMENT, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(6), 1997, pp. 887-895
YIELDING, MOBILE DISLOCATIONS AND CHAOS
Authors: KUNG JF BAO HY GALLIGAN JM
Citation: Jf. Kung et al., YIELDING, MOBILE DISLOCATIONS AND CHAOS, Scripta materialia, 34(3), 1996, pp. 479-482
DISLOCATION VELOCITIES AT LOW-TEMPERATURES
Authors: KIM CS GALLIGAN JM
Citation: Cs. Kim et Jm. Galligan, DISLOCATION VELOCITIES AT LOW-TEMPERATURES, Acta materialia, 44(2), 1996, pp. 775-779
MESOPAUSE TEMPERATURES CALCULATED FROM THE O-2(A(1)DELTA(G)) TWILIGHTAIRGLOW EMISSION RECORDED AT MAYNOOTH (53.2-DEGREES-N, 6.4-DEGREES-W)
Authors: MULLIGAN FJ GALLIGAN JM
Citation: Fj. Mulligan et Jm. Galligan, MESOPAUSE TEMPERATURES CALCULATED FROM THE O-2(A(1)DELTA(G)) TWILIGHTAIRGLOW EMISSION RECORDED AT MAYNOOTH (53.2-DEGREES-N, 6.4-DEGREES-W), Annales geophysicae, 13(5), 1995, pp. 558-566
COLLECTIVE BEHAVIOR OF DISLOCATIONS
Authors: KUNG JF BAO HY GALLIGAN JM
Citation: Jf. Kung et al., COLLECTIVE BEHAVIOR OF DISLOCATIONS, Scripta metallurgica et materialia, 33(2), 1995, pp. 301-305
ON THE PROBLEM OF THE CRITICAL RESOLVED SHEAR-STRESS SATURATION AT LOW-TEMPERATURES
Authors: GALLIGAN JM GUMEN LN KROKHIN AA
Citation: Jm. Galligan et al., ON THE PROBLEM OF THE CRITICAL RESOLVED SHEAR-STRESS SATURATION AT LOW-TEMPERATURES, Scripta metallurgica et materialia, 32(4), 1995, pp. 647-650
PHOTOPLASTICITY AND PHOTONIC CONTROL OF DISLOCATION DENSITIES IN TYPEII-VI SEMICONDUCTORS
Authors: GAROSSHEN TJ GALLIGAN JM
Citation: Tj. Garosshen et Jm. Galligan, PHOTOPLASTICITY AND PHOTONIC CONTROL OF DISLOCATION DENSITIES IN TYPEII-VI SEMICONDUCTORS, Journal of applied physics, 78(8), 1995, pp. 5098-5102
SCANNING-TUNNELING-MICROSCOPY OF POROUS SILICON SURFACES
Authors: AMISOLA GB BEHRENSMEIER R GALLIGAN JM OTTER FA NAMAVAR F KALKORAN NM
Citation: Gb. Amisola et al., SCANNING-TUNNELING-MICROSCOPY OF POROUS SILICON SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(5), 1993, pp. 1788-1792
FURTHER EVIDENCE FOR QUANTUM CONFINEMENT IN POROUS SILICON
Authors: BEHRENSMEIER R NAMAVAR F AMISOLA GB OTTER FA GALLIGAN JM
Citation: R. Behrensmeier et al., FURTHER EVIDENCE FOR QUANTUM CONFINEMENT IN POROUS SILICON, Applied physics letters, 62(19), 1993, pp. 2408-2410
Risultati: 1-14 |