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Results: 1-14 |
Results: 14
ELECTRICAL CHARACTERIZATION OF SHALLOW PN JUNCTIONS
Authors: GAWORZEWSKI P TITTELBACHHELMRICH K JACOB K MULLER B
Citation: P. Gaworzewski et al., ELECTRICAL CHARACTERIZATION OF SHALLOW PN JUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 406-410
ALLOY EFFECTS IN BORON-DOPED SI-RICH SIGE BULK CRYSTALS
Authors: FRANZ M PRESSEL K GAWORZEWSKI P
Citation: M. Franz et al., ALLOY EFFECTS IN BORON-DOPED SI-RICH SIGE BULK CRYSTALS, Journal of applied physics, 84(2), 1998, pp. 709-712
ELECTRICAL-PROPERTIES OF LIGHTLY DOPED P-TYPE SILICON-GERMANIUM SINGLE-CRYSTALS
Authors: GAWORZEWSKI P TITTELBACHHELMRICH K PENNER U ABROSIMOV NV
Citation: P. Gaworzewski et al., ELECTRICAL-PROPERTIES OF LIGHTLY DOPED P-TYPE SILICON-GERMANIUM SINGLE-CRYSTALS, Journal of applied physics, 83(10), 1998, pp. 5258-5263
THERMAL DONORS IN SILICON-RICH SIGE
Authors: HILD E GAWORZEWSKI P FRANZ M PRESSEL K
Citation: E. Hild et al., THERMAL DONORS IN SILICON-RICH SIGE, Applied physics letters, 72(11), 1998, pp. 1362-1364
ATOMIC LAYER DOPING OF SIGE BY LOW-PRESSURE (RAPID THERMAL) CHEMICAL-VAPOR-DEPOSITION
Authors: TILLACK B KRUGER D GAWORZEWSKI P RITTER G
Citation: B. Tillack et al., ATOMIC LAYER DOPING OF SIGE BY LOW-PRESSURE (RAPID THERMAL) CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 15-17
CHARGE-TRANSPORT IN STRAINED SI1-YCY AND SI1-X-YGEXCY ALLOYS ON SI(001)
Authors: OSTEN HJ GAWORZEWSKI P
Citation: Hj. Osten et P. Gaworzewski, CHARGE-TRANSPORT IN STRAINED SI1-YCY AND SI1-X-YGEXCY ALLOYS ON SI(001), Journal of applied physics, 82(10), 1997, pp. 4977-4981
IMPACT OF LOW-CARBON CONCENTRATIONS ON THE ELECTRICAL-PROPERTIES OF HIGHLY BORON-DOPED SIGE LAYERS
Authors: OSTEN HJ LIPPERT G GAWORZEWSKI P SORGE R
Citation: Hj. Osten et al., IMPACT OF LOW-CARBON CONCENTRATIONS ON THE ELECTRICAL-PROPERTIES OF HIGHLY BORON-DOPED SIGE LAYERS, Applied physics letters, 71(11), 1997, pp. 1522-1524
CHARACTERIZATION OF B AND SB DELTA-DOPING PROFILES IN SI AND SI1-XGEXALLOYS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KRUGER D GAWORZEWSKI P KURPS R ZEINDL HP
Citation: D. Kruger et al., CHARACTERIZATION OF B AND SB DELTA-DOPING PROFILES IN SI AND SI1-XGEXALLOYS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 341-347
PROPERTIES OF PROBE TIP SI CONTACTS AND THEIR CONNECTION TO SPREADINGRESISTANCE ANALYSES
Authors: GAWORZEWSKI P ROOS B BORNGRABER J HOPPNER K HOPPNER W HENNIGER U
Citation: P. Gaworzewski et al., PROPERTIES OF PROBE TIP SI CONTACTS AND THEIR CONNECTION TO SPREADINGRESISTANCE ANALYSES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 373-379
THE INFLUENCE OF PLASTIC PROPERTIES OF THE PROBE TIP SI CONTACT ON SPREADING RESISTANCE ANALYSES/
Authors: GAWORZEWSKI P ROOS B HOPPNER K HOPPNER W
Citation: P. Gaworzewski et al., THE INFLUENCE OF PLASTIC PROPERTIES OF THE PROBE TIP SI CONTACT ON SPREADING RESISTANCE ANALYSES/, Journal of applied physics, 79(1), 1996, pp. 129-133
DELTA-DOPING IN SI AND SIGE BY LP(RT)CVD
Authors: TILLACK B SCHLOTE J RITTER G KRUGER D MORGENSTERN G GAWORZEWSKI P
Citation: B. Tillack et al., DELTA-DOPING IN SI AND SIGE BY LP(RT)CVD, Journal de physique. IV, 5(C5), 1995, pp. 1117-1123
PHOSPHORUS SEGREGATION AT POLYSILICON-SILICON INTERFACES FROM IN-SITUP-SPIKE-DOPED SILICON FILMS
Authors: KRUGER D GAWORZEWSKI P KURPS R SCHLOTE J
Citation: D. Kruger et al., PHOSPHORUS SEGREGATION AT POLYSILICON-SILICON INTERFACES FROM IN-SITUP-SPIKE-DOPED SILICON FILMS, Semiconductor science and technology, 10(3), 1995, pp. 326-331
HEAVY PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON WITH A GAP DECOMPOSITION SOURCE
Authors: LIPPERT G OSTEN HJ KRUGER D GAWORZEWSKI P EBERL K
Citation: G. Lippert et al., HEAVY PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON WITH A GAP DECOMPOSITION SOURCE, Applied physics letters, 66(23), 1995, pp. 3197-3199
DOPANT ELECTRICAL-ACTIVITY OF SI AND SI1-XGEX MULTILAYER STRUCTURES DOPED WITH DELTA-LIKE BORON SPIKES AT DIFFERENT TEMPERATURES
Authors: GAWORZEWSKI P KRUGER D KURPS R RUCKER H ZEINDL HP
Citation: P. Gaworzewski et al., DOPANT ELECTRICAL-ACTIVITY OF SI AND SI1-XGEX MULTILAYER STRUCTURES DOPED WITH DELTA-LIKE BORON SPIKES AT DIFFERENT TEMPERATURES, Journal of applied physics, 75(12), 1994, pp. 7869-7875
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