Authors: GHANI T HOYT JL MCCARTHY AM GIBBONS JF

Citation: T. Ghani et al., CONTROL OF IMPLANT-DAMAGE-ENHANCED BORON-DIFFUSION IN EPITAXIALLY GROWN N-SI P-SI1-XGEX/N-SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 24(8), 1995, pp. 999-1002