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Results: 3
ANALYSIS AND MODELING OF THE BASE CURRENTS OF SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED IN HIGH AND LOW-OXYGEN CONTENT MATERIAL/
Authors: SHAFI ZA ASHBURN P POST IRC ROBBINS DJ LEONG WY GIBBINGS CJ NIGRIN S
Citation: Za. Shafi et al., ANALYSIS AND MODELING OF THE BASE CURRENTS OF SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED IN HIGH AND LOW-OXYGEN CONTENT MATERIAL/, Journal of applied physics, 78(4), 1995, pp. 2823-2829
A STUDY OF 0.98 MU-M LASERS WITH GA0.50IN0.50P CONFINING LAYERS (VOL 9, PG 1998, 1994)
Authors: MURRELL DL SELTZER CP GIBBINGS CJ ELTON DJ
Citation: Dl. Murrell et al., A STUDY OF 0.98 MU-M LASERS WITH GA0.50IN0.50P CONFINING LAYERS (VOL 9, PG 1998, 1994), Semiconductor science and technology, 9(8), 1994, pp. 1573-1573
A STUDY OF 0.98 MU-M LAYERS WITH GA0.50IN0.50P CONFINING LAYERS
Authors: MURRELL DL SELTZER CP GIBBINGS CJ ELTON DJ
Citation: Dl. Murrell et al., A STUDY OF 0.98 MU-M LAYERS WITH GA0.50IN0.50P CONFINING LAYERS, Semiconductor science and technology, 9(6), 1994, pp. 1198-1203
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