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Results: 26-50/50
Authors:
VANENCKEVORT WJP
JANSSEN G
VOLLENBERG W
GILING LJ
Citation: Wjp. Vanenckevort et al., ANISOTROPY IN MONOCRYSTALLINE CVD DIAMOND GROWTH .3. SURFACE-MORPHOLOGY OF HOT-FILAMENT GROWN FILMS DEPOSITED ON PLANAR SUBSTRATES, Journal of crystal growth, 148(4), 1995, pp. 365-382
Authors:
SCHERMER JJ
VANENCKEVORT WJP
GILING LJ
Citation: Jj. Schermer et al., ORIENTATION-DEPENDENT SURFACE STABILIZATION ON FLAME DEPOSITED DIAMOND SINGLE-CRYSTALS, Journal of crystal growth, 148(3), 1995, pp. 248-260
Authors:
CAO GZ
DRIESSEN FAJM
BAUHUIS GJ
GILING LJ
ALKEMADE PFA
Citation: Gz. Cao et al., HOMOEPITAXIAL DIAMOND FILMS CODOPED WITH PHOSPHORUS AND NITROGEN BY CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(5), 1995, pp. 3125-3131
Authors:
SCHERMER JJ
GILING LJ
ALERS P
Citation: Jj. Schermer et al., SINGLE-CRYSTAL DIAMOND DEPOSITION BY LAMINAR AND TURBULENT ACETYLENE-OXYGEN FLAMES, Journal of applied physics, 78(4), 1995, pp. 2376-2384
Authors:
CAO GZ
VANENCKEVORT WJP
GILING LJ
DEKRUIF RCM
Citation: Gz. Cao et al., ENHANCEMENT OF PHOSPHORUS INCORPORATION AND GROWTH-RATE OF EPITAXIAL DIAMOND FILMS BY THE ADDITION OF NITROGEN, Applied physics letters, 66(6), 1995, pp. 688-690
Authors:
DRIESSEN FAJM
HAGEMAN PR
OLSTHOORN SM
GILING LJ
Citation: Fajm. Driessen et al., PHOTOLUMINESCENCE OF MODULATION-DOPED ORDERED DISORDERED GALNP(2) HOMOJUNCTIONS - INTRINSIC VERSUS EXTRINSIC EMISSIONS, Applied physics letters, 66(5), 1995, pp. 586-588
Authors:
VANGEELEN A
THOMEER RAJ
GILING LJ
Citation: A. Vangeelen et al., ULTRALOW INTERLACE RECOMBINATION VELOCITY IN ORDERED-DISORDERED GAINP2 DOUBLE HETEROSTRUCTURES, Applied physics letters, 66(4), 1995, pp. 454-456
Authors:
THOMEER RAJ
DRIESSEN FAJM
GILING LJ
Citation: Raj. Thomeer et al., TEMPERATURE-DEPENDENCE OF PHOLOLUMINESCENCE LIFETIMES IN ORDERED GAINP, Applied physics letters, 66(15), 1995, pp. 1960-1962
Authors:
SCHERMER JJ
VANENCKEVORT WJP
GILING LJ
Citation: Jj. Schermer et al., FLAME DEPOSITION AND CHARACTERIZATION OF LARGE TYPE-IIA DIAMOND SINGLE-CRYSTALS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 408-416
Authors:
LAZZARINI L
LI Y
FRANZOSI P
GILING LJ
NASI L
LONGO F
URCHULUTEGUI M
SALVIATI G
Citation: L. Lazzarini et al., STRUCTURAL-PROPERTIES OF GAAS GE HETEROSTRUCTURES AS A FUNCTION OF GROWTH-CONDITIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 502-506
Authors:
DRIESSEN FAJM
BAUHUIS GJ
HAGEMAN PR
VANGEELEN A
GILING LJ
Citation: Fajm. Driessen et al., ANISOTROPIC TRANSPORT-PROPERTIES OF THE 2-DIMENSIONAL ELECTRON-GAS INORDERED-DISORDERED GAINP2 HOMOJUNCTIONS - THE STRUCTURE OF ORDERED DOMAINS, Physical review. B, Condensed matter, 50(23), 1994, pp. 17105-17110
Authors:
HAGEMAN PR
DRIESSEN FAJM
BAUHUIS GJ
GILING LJ
Citation: Pr. Hageman et al., 2-DIMENSIONAL ELECTRON GASES IN LOW-PRESSURE METALORGANIC VAPOR-PHASEEPITAXIALLY GROWN INGAP HOMOJUNCTIONS, Journal of crystal growth, 145(1-4), 1994, pp. 958-962
Authors:
BONGERS MMG
BASTOS PL
GILING LJ
Citation: Mmg. Bongers et al., TEMPERATURE-DEPENDENT FACET DEVELOPMENT OF LP-MOCVD INGAP GROWN ON PATTERNED GAAS SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 981-982
Authors:
HAGEMAN PR
OLSTHOORN SM
GILING LJ
Citation: Pr. Hageman et al., GROWTH OF HIGH-QUALITY ALXGA1-XAS (X=0.05-0.65) BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLETHYLAMINE-ALANE, Journal of crystal growth, 142(3-4), 1994, pp. 284-291
Authors:
ANDERS MJ
HAGEMAN PR
GILING LJ
Citation: Mj. Anders et al., MISORIENTATION DEPENDENCE OF ZINC INCORPORATION IN GAAS, Journal of crystal growth, 142(3-4), 1994, pp. 292-297
Authors:
LI Y
LAZZARINI L
GILING LJ
SALVIATI G
Citation: Y. Li et al., ON THE SUBLATTICE LOCATION OF GAAS GROWN ON GE, Journal of applied physics, 76(10), 1994, pp. 5748-5753
Authors:
DRIESSEN FAJM
BAUHUIS GJ
HAGEMAN PR
GILING LJ
Citation: Fajm. Driessen et al., 2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED, ORDERED-DISORDERED GAINP2 HOMOJUNCTIONS, Applied physics letters, 65(6), 1994, pp. 714-716
Authors:
OLSTHOORN SM
BONGERS MMG
GILING LJ
Citation: Sm. Olsthoorn et al., HIGH-SPATIAL-RESOLUTION PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS GROWN ON A NONPLANAR SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 65(15), 1994, pp. 1952-1954
Authors:
THOMEER RAJ
HAGEMAN PR
GILING LJ
Citation: Raj. Thomeer et al., RADIATIVELY CONTROLLED LIFETIMES IN ALXGA1-XAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 64(12), 1994, pp. 1561-1562
Authors:
SCHERMER JJ
HOGENKAMP JEM
OTTER GCJ
JANSSEN G
VANENCKEVORT WJP
GILING LJ
Citation: Jj. Schermer et al., CONTROLLED DEPOSITION OF DIAMOND FROM AN ACETYLENE OXYGEN COMBUSTION FLAME, DIAMOND AND RELATED MATERIALS, 2(8), 1993, pp. 1149-1155
Authors:
BAUHUIS GJ
DRIESSEN FAJM
GILING LJ
Citation: Gj. Bauhuis et al., CONDUCTION MECHANISMS IN ORDERED GAINP2 EPILAYERS, Physical review. B, Condensed matter, 48(23), 1993, pp. 17239-17242
Authors:
DRIESSEN FAJM
BAUHUIS GJ
OLSTHOORN SM
GILING LJ
Citation: Fajm. Driessen et al., EFFECTS OF CONFINED DONOR STATES ON THE OPTICAL AND TRANSPORT-PROPERTIES OF ORDERED GAINP2 ALLOYS, Physical review. B, Condensed matter, 48(11), 1993, pp. 7889-7896
Authors:
OLSTHOORN SM
DRIESSEN FAJM
EIJKELENBOOM APAM
GILING LJ
Citation: Sm. Olsthoorn et al., PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF AL0.48IN0.52AS, Journal of applied physics, 73(11), 1993, pp. 7798-7803
Authors:
OLSTHOORN SM
DRIESSEN FAJM
GILING LJ
Citation: Sm. Olsthoorn et al., PHOTOLUMINESCENCE PROPERTIES OF THE AL0.48IN0.52ASINP INTERFACE AND THE DIFFUSION OF CARRIERS THERETO, Journal of applied physics, 73(11), 1993, pp. 7804-7809
Authors:
DRIESSEN FAJM
OLSTHOORN SM
GILING LJ
Citation: Fajm. Driessen et al., DETECTION OF 2-DIMENSIONAL ELECTRON GASES IN UNDOPED HETEROJUNCTIONS WITH MAGNETOPHOTOLUMINESCENCE, Applied physics letters, 62(20), 1993, pp. 2528-2529