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0.15 MU-M T-GATE E-BEAM LITHOGRAPHY USING CROSS-LINKED P(MMA MAA) DEVELOPED IN ORTHO-XYLENE RESULTING IN HIGH-CONTRAST AND HIGH PLASMA STABILITY FOR DRY-ETCHED RECESS GATE PSEUDOMORPHIC MODFETS FOR MMIC PRODUCTION/
Authors: HULSMANN A MUHLFRIEDEL E RAYNOR B GLORER K BRONNER W KOHLER K SCHNEIDER J BRAUNSTEIN J SCHLECHTWEG M TASKER P THIEDE A JAKOBUS T
Citation: A. Hulsmann et al., 0.15 MU-M T-GATE E-BEAM LITHOGRAPHY USING CROSS-LINKED P(MMA MAA) DEVELOPED IN ORTHO-XYLENE RESULTING IN HIGH-CONTRAST AND HIGH PLASMA STABILITY FOR DRY-ETCHED RECESS GATE PSEUDOMORPHIC MODFETS FOR MMIC PRODUCTION/, Microelectronic engineering, 23(1-4), 1994, pp. 437-440
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