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Results: 1-10 |
Results: 10
STUDY OF RECOIL IMPLANTATION TECHNIQUE FOR DEEP LOW DOPED JUNCTION FORMATION WITH ALUMINUM
Authors: GODIGNON P MORVAN E MONTSERRAT J JORDA X VELLVEHI M HIDALGO S REBOLLO J
Citation: P. Godignon et al., STUDY OF RECOIL IMPLANTATION TECHNIQUE FOR DEEP LOW DOPED JUNCTION FORMATION WITH ALUMINUM, Microelectronic engineering, 40(2), 1998, pp. 99-109
HIGH-FREQUENCY CV MEASUREMENTS OF SIC MOS CAPACITORS
Authors: BERBERICH S GODIGNON P LOCATELLI ML MILLAN J HARTNAGEL HL
Citation: S. Berberich et al., HIGH-FREQUENCY CV MEASUREMENTS OF SIC MOS CAPACITORS, Solid-state electronics, 42(6), 1998, pp. 915-920
THE DUAL MOS-GATED THYRISTOR (DMGT) STRUCTURE
Authors: FLORES D FERNANDEZ J JORDA X REBOLLO J GODIGNON P HIDALGO S MILLAN J
Citation: D. Flores et al., THE DUAL MOS-GATED THYRISTOR (DMGT) STRUCTURE, Solid-state electronics, 42(4), 1998, pp. 523-529
COMPARISON OF EST STRUCTURES WITH NMOS AND PMOS TRANSISTORS FOR CONTROLLING THE THYRISTOR CURRENT
Authors: FLORES D REBOLLO J FERNANDEZ J JORDA X GODIGNON P MILLAN J
Citation: D. Flores et al., COMPARISON OF EST STRUCTURES WITH NMOS AND PMOS TRANSISTORS FOR CONTROLLING THE THYRISTOR CURRENT, Microelectronics, 29(11), 1998, pp. 933-937
MONTECARLO SIMULATION OF ION-IMPLANTATION INTO SIC-6H SINGLE-CRYSTAL INCLUDING CHANNELING EFFECT
Authors: MORVAN E GODIGNON P MONTSERRAT J FERNANDEZ J FLORES D MILLAN J CHANTE JP
Citation: E. Morvan et al., MONTECARLO SIMULATION OF ION-IMPLANTATION INTO SIC-6H SINGLE-CRYSTAL INCLUDING CHANNELING EFFECT, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 218-222
THE IBMCT - A NOVEL MOS-GATED THYRISTOR STRUCTURE
Authors: FLORES D GODIGNON P VELLVEHI M FERNANDEZ J HIDALGO S REBOLLO J MILLAN J
Citation: D. Flores et al., THE IBMCT - A NOVEL MOS-GATED THYRISTOR STRUCTURE, IEEE electron device letters, 18(1), 1997, pp. 10-12
A NEW LATERAL IGBT FOR HIGH-TEMPERATURE OPERATION
Authors: VELLVEHI M GODIGNON P FLORES D FERNANDEZ J HIDALGO S REBOLLO J MILLAN J
Citation: M. Vellvehi et al., A NEW LATERAL IGBT FOR HIGH-TEMPERATURE OPERATION, Solid-state electronics, 41(5), 1997, pp. 739-747
HIGH-FREQUENCY CHARACTERISTICS AND MODELING OF P-TYPE 6H-SILICON CARBIDE MOS STRUCTURES
Authors: FERNANDEZ J GODIGNON P BERBERICH S REBOLLO J BREZEANU G MILLAN J
Citation: J. Fernandez et al., HIGH-FREQUENCY CHARACTERISTICS AND MODELING OF P-TYPE 6H-SILICON CARBIDE MOS STRUCTURES, Solid-state electronics, 39(9), 1996, pp. 1359-1364
DESIGN CONSIDERATIONS OF A MOS-BIPOLAR DARLINGTON STRUCTURE - THE VERTICAL INSULATED BASE TRANSISTOR (IBT)
Authors: GODIGNON P FERNANDEZ J FLORES D HIDALGO S REBOLLO J MILLAN J CHANTE JP
Citation: P. Godignon et al., DESIGN CONSIDERATIONS OF A MOS-BIPOLAR DARLINGTON STRUCTURE - THE VERTICAL INSULATED BASE TRANSISTOR (IBT), Solid-state electronics, 39(12), 1996, pp. 1777-1782
NUMERICAL-SIMULATION OF THE INSULATED BASE MOS-CONTROLLED THYRISTOR
Authors: FLORES D GODIGNON P VELLVEHI M FERNANDEZ J HIDALGO S REBOLLO J MILLAN J
Citation: D. Flores et al., NUMERICAL-SIMULATION OF THE INSULATED BASE MOS-CONTROLLED THYRISTOR, Microelectronics, 27(2-3), 1996, pp. 177-180
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