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Results: 1-25 | 26-30
Results: 1-25/30
PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION
Authors: CHARBONNEAU S KOTELES ES POOLE PJ HE JJ AERS GC HAYSOM J BUCHANAN M FENG Y DELAGE A YANG F DAVIES M GOLDBERG RD PIVA PG MITCHELL IV
Citation: S. Charbonneau et al., PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 772-793
REDUCED 980 NM LASER FACET ABSORPTION BY BAND-GAP SHIFTED EXTENDED CAVITIES
Authors: PIVA PG GOLDBERG RD MITCHELL IV FAFARD S DION M BUCHANAN M CHARBONNEAU S HILLIER G MINER C
Citation: Pg. Piva et al., REDUCED 980 NM LASER FACET ABSORPTION BY BAND-GAP SHIFTED EXTENDED CAVITIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1790-1793
LATERAL SELECTIVITY OF ION-INDUCED QUANTUM-WELL INTERMIXING
Authors: HAYSOM JE POOLE PJ FENG Y KOTELES ES HE JJ CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Je. Haysom et al., LATERAL SELECTIVITY OF ION-INDUCED QUANTUM-WELL INTERMIXING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 817-820
ION-IMPLANTATION ENHANCED INTERMIXING OF AL-FREE 980 NM LASER STRUCTURES
Authors: PIVA PG CHARBONNEAU S GOLDBERG RD MITCHELL IV HILLIER G MINER C
Citation: Pg. Piva et al., ION-IMPLANTATION ENHANCED INTERMIXING OF AL-FREE 980 NM LASER STRUCTURES, Applied physics letters, 73(1), 1998, pp. 67-69
A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/
Authors: PIVA PG GOLDBERG RD MITCHELL IV CHEN HJ FEENSTRA RM WEATHERLY GC MCCOMB DW AERS GC POOLE PJ CHARBONNEAU S
Citation: Pg. Piva et al., A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/, Applied physics letters, 72(13), 1998, pp. 1599-1601
INTRINSIC ELECTRIC-FIELDS IN SILICON
Authors: SIMPSON PJ KNIGHTS AP GOLDBERG RD AERS GC LANDHEER D
Citation: Pj. Simpson et al., INTRINSIC ELECTRIC-FIELDS IN SILICON, Applied surface science, 116, 1997, pp. 211-214
ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS
Authors: GOLDBERG RD MITCHELL IV POOLE P LABRIE D LAFONTAINE H AERS GC WILLIAMS R DION M CHARBONNEAU S RAMANUJANCHA K WEATHERLY GC
Citation: Rd. Goldberg et al., ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 418-422
REDUCTION OF INGAAS GAAS LASER FACET TEMPERATURES BY BAND-GAP SHIFTEDEXTENDED CAVITIES/
Authors: PIVA PG FAFARD S DION M BUCHANAN M CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Pg. Piva et al., REDUCTION OF INGAAS GAAS LASER FACET TEMPERATURES BY BAND-GAP SHIFTEDEXTENDED CAVITIES/, Applied physics letters, 70(13), 1997, pp. 1662-1664
THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION
Authors: POOLE PJ DAVIES M DION M FENG Y CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION, IEEE photonics technology letters, 8(9), 1996, pp. 1145-1147
DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER
Authors: POOLE PJ CHARBONNEAU S DION M AERS GC BUCHANAN M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER, IEEE photonics technology letters, 8(1), 1996, pp. 16-18
GETTERING OF CU TO HYDROGEN-INDUCED CAVITIES IN SI
Authors: HALL KC GOLDBERG RD LOWES TD SIMPSON PJ MITCHELL IV WEATHERLY GC
Citation: Kc. Hall et al., GETTERING OF CU TO HYDROGEN-INDUCED CAVITIES IN SI, Canadian journal of physics, 74, 1996, pp. 248-251
QUANTUM-WELL INTERMIXING IN SI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES USING ION-IMPLANTATION/
Authors: LABRIE D LAFONTAINE H ROWELL N CHARBONNEAU S HOUGHTON D GOLDBERG RD MITCHELL IV
Citation: D. Labrie et al., QUANTUM-WELL INTERMIXING IN SI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES USING ION-IMPLANTATION/, Applied physics letters, 69(7), 1996, pp. 993-995
POLARIZATION-INSENSITIVE INGAAS INGAASP/INP AMPLIFIERS USING QUANTUM-WELL INTERMIXING/
Authors: HE JJ CHARBONNEAU S POOLE PJ AERS GC FENG Y KOTELES ES GOLDBERG RD MITCHELL IV
Citation: Jj. He et al., POLARIZATION-INSENSITIVE INGAAS INGAASP/INP AMPLIFIERS USING QUANTUM-WELL INTERMIXING/, Applied physics letters, 69(4), 1996, pp. 562-564
EFFECTS OF LOW-TEMPERATURE PREANNEALING ON ION-IMPLANT ASSISTED INTERMIXING OF SI1-XGEX SI QUANTUM-WELLS/
Authors: LABRIE D AERS GC LAFONTAINE H WILLIAMS RL CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: D. Labrie et al., EFFECTS OF LOW-TEMPERATURE PREANNEALING ON ION-IMPLANT ASSISTED INTERMIXING OF SI1-XGEX SI QUANTUM-WELLS/, Applied physics letters, 69(25), 1996, pp. 3866-3868
HIGH-RELIABILITY BLUE-SHIFTED INGAASP INP LASERS/
Authors: NOEL JP MELVILLE D JONES T SHEPHERD FR MINER CJ PUETZ N FOX K POOLE PJ FENG Y KOTELES ES CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Jp. Noel et al., HIGH-RELIABILITY BLUE-SHIFTED INGAASP INP LASERS/, Applied physics letters, 69(23), 1996, pp. 3516-3518
CHEMICAL INFORMATION IN POSITRON-ANNIHILATION SPECTRA
Authors: MYLER U GOLDBERG RD KNIGHTS AP LAWTHER DW SIMPSON PJ
Citation: U. Myler et al., CHEMICAL INFORMATION IN POSITRON-ANNIHILATION SPECTRA, Applied physics letters, 69(22), 1996, pp. 3333-3335
EFFECT OF IMPLANTATION DOSE ON PHOTOLUMINESCENCE DECAY TIMES IN INTERMIXED GAAS ALGAAS QUANTUM-WELLS/
Authors: PIVA PG CHARBONNEAU S MITCHELL IV GOLDBERG RD
Citation: Pg. Piva et al., EFFECT OF IMPLANTATION DOSE ON PHOTOLUMINESCENCE DECAY TIMES IN INTERMIXED GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 68(16), 1996, pp. 2252-2254
DEFECT PROFILING IN MULTILAYERED SYSTEMS USING MEAN DEPTH SCALING
Authors: AERS GC MARSHALL PA LEUNG TC GOLDBERG RD
Citation: Gc. Aers et al., DEFECT PROFILING IN MULTILAYERED SYSTEMS USING MEAN DEPTH SCALING, Applied surface science, 85(1-4), 1995, pp. 196-209
DETERMINATION OF THE CHARACTERISTIC SIGNAL FOR POSITRON-ANNIHILATION AT DIVACANCIES IN ION-IRRADIATED SILICON
Authors: GOLDBERG RD SCHULTZ PJ SIMPSON PJ
Citation: Rd. Goldberg et al., DETERMINATION OF THE CHARACTERISTIC SIGNAL FOR POSITRON-ANNIHILATION AT DIVACANCIES IN ION-IRRADIATED SILICON, Applied surface science, 85(1-4), 1995, pp. 287-291
SECONDARY DEFECT FORMATION IN SELF-ION IRRADIATED SILICON
Authors: GOLDBERG RD SIMPSON TW MITCHELL IV SIMPSON PJ PRIKRYL M WEATHERLY GC
Citation: Rd. Goldberg et al., SECONDARY DEFECT FORMATION IN SELF-ION IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 216-221
AMORPHIZATION OF SILICON BY ELEVATED-TEMPERATURE ION IRRADIATION
Authors: GOLDBERG RD WILLIAMS JS ELLIMAN RG
Citation: Rd. Goldberg et al., AMORPHIZATION OF SILICON BY ELEVATED-TEMPERATURE ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 242-247
BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL LASER STRUCTURES USING HIGH-ENERGY ION-IMPLANTATION
Authors: CHARBONNEAU S POOLE PJ PIVA PG BUCHANAN M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL LASER STRUCTURES USING HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 457-460
QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION
Authors: CHARBONNEAU S POOLE PJ PIVA PG AERS GC KOTELES ES FALLAHI M HE JJ MCCAFFREY JP BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION, Journal of applied physics, 78(6), 1995, pp. 3697-3705
DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING
Authors: POOLE PJ CHARBONNEAU S AERS GC JACKMAN TE BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING, Journal of applied physics, 78(4), 1995, pp. 2367-2371
BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/
Authors: CHARBONNEAU S POOLE PJ FENG Y AERS GC DION M DAVIES M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/, Applied physics letters, 67(20), 1995, pp. 2954-2956
Risultati: 1-25 | 26-30