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Results: 1-25 | 26-29 |
Results: 26-29/29
DEEP LEVELS IN GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Authors: GOMBIA E MOSCA R BOSACCHI A MADELLA M FRANCHI S
Citation: E. Gombia et al., DEEP LEVELS IN GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(22), 1994, pp. 2848-2850
LOW-TEMPERATURE OCCUPATION OF A DONOR STATE RESONANT WITH THE CONDUCTION-BAND IN AL0.35GA0.65AS
Authors: BARALDI A COLONNA E FRIGERI P GHEZZI C PARISINI A GOMBIA E MOSCA R
Citation: A. Baraldi et al., LOW-TEMPERATURE OCCUPATION OF A DONOR STATE RESONANT WITH THE CONDUCTION-BAND IN AL0.35GA0.65AS, Physical review. B, Condensed matter, 48(24), 1993, pp. 17835-17840
THERMAL-STABILITY OF AL ALGAAS AND AL/GAAS/ALGAAS(MBE) SCHOTTKY BARRIERS/
Authors: BOSACCHI A FRANCHI S GOMBIA E MOSCA R FANTINI F FRANCHI S MENOZZI R
Citation: A. Bosacchi et al., THERMAL-STABILITY OF AL ALGAAS AND AL/GAAS/ALGAAS(MBE) SCHOTTKY BARRIERS/, Electronics Letters, 29(8), 1993, pp. 651-653
THE INFLUENCE OF THE DX CENTER C-V AND IV CHARACTERISTICS OF SCHOTTKYBARRIERS IN N-TYPE ALGAAS
Authors: GHEZZI C GOMBIA E MOSCA R
Citation: C. Ghezzi et al., THE INFLUENCE OF THE DX CENTER C-V AND IV CHARACTERISTICS OF SCHOTTKYBARRIERS IN N-TYPE ALGAAS, Semiconductor science and technology, 6(10B), 1991, pp. 31-33
Risultati: 1-25 | 26-29 |