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Results: 1-2 |
Results: 2
VARIATION OF ARSENIC DIFFUSION-COEFFICIENTS IN HGCDTE ALLOYS WITH TEMPERATURE AND HG PRESSURE - TUNING OF P-ON-N DOUBLE-LAYER HETEROJUNCTION DIODE PROPERTIES
Authors: CHANDRA D GOODWIN MW CHEN MC MAGEL LK
Citation: D. Chandra et al., VARIATION OF ARSENIC DIFFUSION-COEFFICIENTS IN HGCDTE ALLOYS WITH TEMPERATURE AND HG PRESSURE - TUNING OF P-ON-N DOUBLE-LAYER HETEROJUNCTION DIODE PROPERTIES, Journal of electronic materials, 24(5), 1995, pp. 599-608
INFLUENCE OF HG PRESSURE ON DIFFUSION-COEFFICIENT OF AS IN HGCDTE
Authors: CHANDRA D GOODWIN MW CHEN MC DODGE JA
Citation: D. Chandra et al., INFLUENCE OF HG PRESSURE ON DIFFUSION-COEFFICIENT OF AS IN HGCDTE, Journal of electronic materials, 22(8), 1993, pp. 1033-1037
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