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Results: 1-25/36
Authors:
UREN GD
GOORSKY MS
KOONTZ EM
LIM MH
PETRICH GS
KOLODZIEJSKI LA
WONG VV
SMITH HI
MATNEY KM
WORMINGTON M
Citation: Gd. Uren et al., ANALYSIS OF LATTICE-DISTORTIONS IN HIGH-QUALITY INGAASP EPITAXIAL OVERGROWTH OF RECTANGULAR-PATTERNED INP GRATINGS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1381-1384
Authors:
HAN BK
LI L
KAPPERS MJ
HICKS RF
YOON H
GOORSKY MS
HIGA KT
Citation: Bk. Han et al., CHARACTERIZATION OF INGAAS GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING ALTERNATIVE SOURCES/, Journal of electronic materials, 27(2), 1998, pp. 81-84
Authors:
LI L
HAN BK
HICKS RF
YOON H
GOORSKY MS
Citation: L. Li et al., ATOMIC-STRUCTURE OF INXGA1-XAS GAAS(001) (2X4) AND (3X2) SURFACES/, Ultramicroscopy, 73(1-4), 1998, pp. 229-235
Authors:
HERMON H
SCHIEBER M
JAMES RB
LUND J
ANTOLAK AJ
MORSE DH
KOLESNIKOV NNP
IVANOV YN
GOORSKY MS
YOON H
TONEY J
SCHLESINGER TE
Citation: H. Hermon et al., HOMOGENEITY OF CDZNTE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 410(1), 1998, pp. 100-106
Authors:
CHOUR KW
ZHANG RC
GOORSKY MS
TAKADA T
AKIBA E
KUMAGAI T
KAWAGUCHI K
JENSEN ML
EAVES C
XU R
Citation: Kw. Chour et al., AUTOSTOICHIOMETRIC VAPOR-DEPOSITION III - A STUDY OF STOICHIOMETRY AND CHARACTERIZATION OF EPITAXIAL LITAO3 LAYER, Journal of crystal growth, 183(1-2), 1998, pp. 217-226
Authors:
CHRISTENSEN DH
HILL JR
HICKERNELL RK
MATNEY K
GOORSKY MS
Citation: Dh. Christensen et al., EVALUATING EPITAXIAL-GROWTH STABILITY, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 113-116
Authors:
GOORSKY MS
MATNEY KM
MESHKINPOUR M
STREIT DC
BLOCK TR
Citation: Ms. Goorsky et al., RECIPROCAL SPACE MAPPING FOR SEMICONDUCTOR SUBSTRATES AND DEVICE HETEROSTRUCTURES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 257-266
Authors:
YOON H
VANSCYOC JM
GOORSKY MS
HERMON H
SCHIEBER M
LUND JC
JAMES RB
Citation: H. Yoon et al., INVESTIGATION OF THE EFFECTS OF POLISHING AND ETCHING ON THE QUALITY OF CD1-XZNXTE USING SPATIAL-MAPPING TECHNIQUES, Journal of electronic materials, 26(6), 1997, pp. 529-533
Authors:
CHU MA
TANNER MO
HUANG FY
WANG KL
CHU GG
GOORSKY MS
Citation: Ma. Chu et al., PHOTOLUMINESCENCE AND X-RAY CHARACTERIZATION OF RELAXED SI1-XGEX ALLOYS GROWN ON SILICON-ON-INSULATOR (SOI) AND IMPLANTED SOI SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 1278-1283
Authors:
KOLESNIKOV NN
KOLCHIN AA
ALOV DL
IVANOV YN
CHERNOV AA
SCHIEBER M
HERMON H
JAMES RB
GOORSKY MS
YOON H
TONEY J
BRUNETT B
SCHLESINGER TE
Citation: Nn. Kolesnikov et al., GROWTH AND CHARACTERIZATION OF P-TYPE CD1-XZNXTE (X=0.2, 0.3, 0.4), Journal of crystal growth, 174(1-4), 1997, pp. 256-262
Authors:
YOON H
LINDO SE
GOORSKY MS
Citation: H. Yoon et al., CHARACTERIZATION OF TERNARY SUBSTRATE MATERIALS USING TRIPLE AXIS X-RAY-DIFFRACTION, Journal of crystal growth, 174(1-4), 1997, pp. 775-782
Authors:
FEILER D
WILLIAMS RS
TALIN AA
YOON HJ
GOORSKY MS
Citation: D. Feiler et al., PULSED-LASER DEPOSITION OF EPITAXIAL ALN, GAN, AND INN THIN-FILMS ON SAPPHIRE(0001), Journal of crystal growth, 171(1-2), 1997, pp. 12-20
Authors:
MESHKINPOUR M
GOORSKY MS
JENICHEN B
STREIT DC
BLOCK TR
Citation: M. Meshkinpour et al., THE ROLE OF SUBSTRATE QUALITY ON MISFIT DISLOCATION FORMATION IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of applied physics, 81(7), 1997, pp. 3124-3128
Authors:
SCHIEBER M
HERMON H
JAMES RB
LUND J
ANTOLAK A
MORSE D
KOLESNIKOV NN
IVANOV YN
GOORSKY MS
VANSCYOC JM
YOON H
TONEY J
SCHLESINGER TE
DOTY FP
COZZATTI JPD
Citation: M. Schieber et al., MAPPING HIGH-PRESSURE BRIDGMAN CD0.8ZN0.2TE, IEEE transactions on nuclear science, 44(6), 1997, pp. 2566-2570
Authors:
KOONTZ EM
LIM MH
WONG VV
PETRICH GS
KOLODZIEJSKI LA
SMITH HI
MATNEY KM
UREN GD
GOORSKY MS
Citation: Em. Koontz et al., PRESERVATION OF RECTANGULAR-PATTERNED INP GRATINGS OVERGROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(10), 1997, pp. 1400-1402
Authors:
RICH DH
RAMMOHAN K
LIN HT
TANG Y
MESHKINPOUR M
GOORSKY MS
Citation: Dh. Rich et al., EFFECT OF INTERFACE DEFECT FORMATION ON CARRIER DIFFUSION AND LUMINESCENCE IN IN0.2GA0.8AS ALXGA1-XAS QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2922-2935
Authors:
PARSEY JM
GOORSKY MS
Citation: Jm. Parsey et Ms. Goorsky, CHARACTERIZING AND ETCHING BLUE-LIGHT-EMITTING SEMICONDUCTOR-MATERIALS, JOM, 48(8), 1996, pp. 45-45
Authors:
VANSCYOC JM
LUND JC
MORSE DH
ANTOLAK AJ
OLSEN RW
JAMES RB
SCHIEBER M
YOON H
GOORSKY MS
TONEY J
SCHLESINGER TE
Citation: Jm. Vanscyoc et al., MATERIAL INHOMOGENEITIES IN CD1-XZNXTE AND THEIR EFFECTS ON LARGE-VOLUME GAMMA-RAY DETECTORS, Journal of electronic materials, 25(8), 1996, pp. 1323-1327
Authors:
GOORSKY MS
LINDO SE
GUHA S
HAUGEN GM
Citation: Ms. Goorsky et al., NONDESTRUCTIVE ANALYSIS OF STRUCTURAL DEFECTS IN WIDE BANDGAP II-VI HETEROSTRUCTURES, Journal of electronic materials, 25(2), 1996, pp. 235-238
Authors:
GOORSKY MS
YOON H
SCHIEBER M
JAMES RB
MCGREGOR DS
NATARAJAN M
Citation: Ms. Goorsky et al., X-RAY DIFFUSE-SCATTERING FOR EVALUATION OF WIDE BANDGAP SEMICONDUCTORNUCLEAR RADIATION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 6-9
Authors:
MCGREGOR DS
ANTOLAK AJ
CROSS ES
FANG ZQ
GOORSKY MS
HENRY RL
JAMES RB
LOOK DC
MIER MG
MORSE DH
NORDQUIST PER
OLSEN R
SCHIEBER M
SCHLESINGER TE
SORIA E
TONEY JE
VANSCYOC J
YOON H
Citation: Ds. Mcgregor et al., MATERIAL ANALYSIS AND CHARACTERIZATION ON ZONE REFINED AND ZONE LEVELED VERTICAL ZONE MELT GAAS FOR RADIATION SPECTROMETERS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 84-87
Authors:
STOCK SR
REK ZU
GOORSKY MS
Citation: Sr. Stock et al., CHARACTERIZATION OF TASI2-SI COMPOSITES FOR USE AS WIDE-BANDPASS OPTICAL-ELEMENTS FOR SYNCHROTRON-RADIATION, Journal of applied physics, 79(9), 1996, pp. 6803-6810
Authors:
MCGREGOR DS
ANTOLAK AJ
CHUI HC
CROSS ES
FANG ZQ
FLATLEY JE
GOORSKY MS
HENRY RL
JAMES RB
LOOK DC
MIER MG
MORSE DH
NORDQUIST PER
OLSEN RW
POCHA M
SCHIEBER M
SCHLESINGER TE
SORIA E
TONEY JE
VANSCYOC J
YOON H
WANG CL
Citation: Ds. Mcgregor et al., THE INVESTIGATION OF CUSTOM GROWN VERTICAL ZONE MELT SEMIINSULATING BULK GALLIUM-ARSENIDE AS A RADIATION SPECTROMETER, IEEE transactions on nuclear science, 43(3), 1996, pp. 1397-1406
Authors:
UREN GD
GOORSKY MS
MEISHAUGEN G
LAW KK
MILLER TJ
HABERERN KW
Citation: Gd. Uren et al., DEFECT CHARACTERIZATION OF ETCH PITS IN ZNSE BASED EPITAXIAL LAYERS, Applied physics letters, 69(8), 1996, pp. 1089-1091
Authors:
HORNG ST
GOORSKY MS
Citation: St. Horng et Ms. Goorsky, COMPLETE P-TYPE ACTIVATION IN VERTICAL-GRADIENT FREEZE GAAS CO-IMPLANTED WITH GALLIUM AND CARBON, Applied physics letters, 68(11), 1996, pp. 1537-1539