Authors:
SCHOLZ T
GETTO R
GOTTFRIED K
KURZ G
KRIZ J
LAUER V
Citation: T. Scholz et al., INVESTIGATION OF METALLIZATION SCHEMES FOR HIGH-TEMPERATURE DEVICES BASED ON SILICON-CARBIDE, Fresenius' journal of analytical chemistry, 361(6-7), 1998, pp. 570-573
Citation: J. Kriz et al., DETERMINATION OF OHMIC CONTACTS TO N-TYPE 6H-SIC AND POLYCRYSTALLINE 3C-SIC USING CIRCULAR TRANSMISSION-LINE STRUCTURES, DIAMOND AND RELATED MATERIALS, 7(1), 1998, pp. 77-80
Authors:
GOTTFRIED K
KRIZ J
WERNINGHAUS T
THUMER M
KAUFMANN C
ZAHN DRT
GESSNER T
Citation: K. Gottfried et al., FILM STRESS MEASUREMENTS FOR HIGH-TEMPERATURE MICROMECHANICAL AND MICROELECTRONICAL APPLICATIONS BASED ON SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 171-175
Authors:
KRIZ J
GOTTFRIED K
SCHOLZ T
KAUFMANN C
GESSNER T
Citation: J. Kriz et al., OHMIC CONTACTS TO N-TYPE POLYCRYSTALLINE SIC FOR HIGH-TEMPERATURE MICROMECHANICAL APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 180-185