Authors: NICOLAZO F GOULLET A GRANIER A VALLEE C TURBAN G GROLLEAU B

Citation: F. Nicolazo et al., STUDY OF OXYGEN TEOS PLASMAS AND THIN SIOX FILMS OBTAINED IN AN HELICON DIFFUSION REACTOR/, Surface & coatings technology, 98(1-3), 1998, pp. 1578-1583

Authors: GRANIER A NICOLAZO F VALLEE C GOULLET A TURBAN G GROLLEAU B

Citation: A. Granier et al., DIAGNOSTICS IN O-2 HELICON PLASMAS FOR SIO2 DEPOSITION, Plasma sources science & technology, 6(2), 1997, pp. 147-156

Authors: VALLEE C GOULLET A GRANIER A

Citation: C. Vallee et al., DIRECT OBSERVATION OF WATER INCORPORATION IN PECVD SIO2-FILMS BY UV-VISIBLE ELLIPSOMETRY, Thin solid films, 311(1-2), 1997, pp. 212-217

Authors: VALLEE C GOULLET A NICOLAZO F GRANIER A TURBAN G

Citation: C. Vallee et al., IN-SITU ELLIPSOMETRY AND INFRARED-ANALYSIS OF PECVD SIO2-FILMS DEPOSITED IN AN O-2 TEOS HELICON REACTOR/, Journal of non-crystalline solids, 216, 1997, pp. 48-54

Authors: CHARLES C GIROULTMATLAKOWSKI G BOSWELL RW GOULLET A TURBAN G CARDINAUD C

Citation: C. Charles et al., CHARACTERIZATION OF SILICON DIOXIDE FILMS DEPOSITED AT LOW-PRESSURE AND TEMPERATURE IN A HELICON DIFFUSION REACTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 2954-2963

Authors: GOULLET A CHARLES C GARCIA P TURBAN G

Citation: A. Goullet et al., QUANTITATIVE INFRARED-ANALYSIS OF THE STRETCHING PEAK OF SIO2-FILMS DEPOSITED FROM TETRAETHOXYSILANE PLASMAS, Journal of applied physics, 74(11), 1993, pp. 6876-6882