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Results: 3
IN-SITU GROWTH OF EVAPORATED TIO2 THIN-FILMS USING OXYGEN RADICALS - EFFECT OF DEPOSITION TEMPERATURE
Authors: GRAHN JV LINDER M FREDRIKSSON E
Citation: Jv. Grahn et al., IN-SITU GROWTH OF EVAPORATED TIO2 THIN-FILMS USING OXYGEN RADICALS - EFFECT OF DEPOSITION TEMPERATURE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2495-2500
EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF EVAPORATED TANTALUMPENTOXIDE THIN-FILMS ON SILICON DEPOSITED USING OXYGEN RADICALS
Authors: GRAHN JV HELLBERG PE OLSSON E
Citation: Jv. Grahn et al., EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF EVAPORATED TANTALUMPENTOXIDE THIN-FILMS ON SILICON DEPOSITED USING OXYGEN RADICALS, Journal of applied physics, 84(3), 1998, pp. 1632-1642
CHARACTERIZATION OF IN-SITU PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS GROWN BY DISILANE-BASED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: GRAHN JV PEJNEFORS J SANDEN M ZHANG SL OSTLING M
Citation: Jv. Grahn et al., CHARACTERIZATION OF IN-SITU PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS GROWN BY DISILANE-BASED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3952-3958
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