Authors: FU Y JOELSSON KB GRAHN KJ NI WX HANSSON GV WILLANDER M

Citation: Y. Fu et al., HALL FACTOR IN STRAINED P-TYPE DOPED SI1-XGEX ALLOY, Physical review. B, Condensed matter, 54(16), 1996, pp. 11317-11321

Authors: GRAHN KJ KUIVALAINEN P ERANEN S

Citation: Kj. Grahn et al., EFFECT OF PARTIAL IONIZATION AND THE CHARACTERISTICS OF LATERAL POWERDIAMOND MESFETS, Physica scripta. T, 54, 1994, pp. 151-153

Authors: FU Y GRAHN KJ WILLANDER M

Citation: Y. Fu et al., VALENCE-BAND STRUCTURE OF GEXSI1-X FOR HOLE TRANSPORT CALCULATION, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 26-31

Authors: GRAHN KJ

Citation: Kj. Grahn, 2-DIMENSIONAL NUMERICAL MODELING OF ADVANCED SEMICONDUCTOR-DEVICES FROM THE PHYSICAL POINT-OF-VIEW, Acta polytechnica Scandinavica. El, Electrical engineering series, (76), 1993, pp. 1-78