Authors: GRANDIDIER B STIEVENARD D NYS JP WALLART X

Citation: B. Grandidier et al., MICROSCOPIC BEHAVIOR OF SILICON IN SILICON DELTA-DOPED LAYER IN GAAS, Applied physics letters, 72(19), 1998, pp. 2454-2456

Authors: GRANDIDIER B NYS JP STIEVENARD D DELABROISE X DELERUE C LANNOO M

Citation: B. Grandidier et al., STM MEASUREMENTS OF BARRIER HEIGHT ON SI(111)-7X7 AND GAAS(110) CLEAVED SURFACES USING I(Z), Z(V) AND I(Z(V),V) TECHNIQUES, Applied physics A: Materials science & processing, 66, 1998, pp. 977-980

Authors: LEGRAND B GRANDIDIER B NYS JP STIEVENARD D GERARD JM THIERRYMIEG V

Citation: B. Legrand et al., SCANNING-TUNNELING-MICROSCOPY AND SCANNING TUNNELING SPECTROSCOPY OF SELF-ASSEMBLED INAS QUANTUM DOTS, Applied physics letters, 73(1), 1998, pp. 96-98

Authors: STIEVENARD D GRANDIDIER B NYS JP DELABROISE X DELERUE C LANNOO M

Citation: D. Stievenard et al., INFLUENCE OF BARRIER HEIGHT ON SCANNING TUNNELING SPECTROSCOPY EXPERIMENTAL AND THEORETICAL ASPECTS, Applied physics letters, 72(5), 1998, pp. 569-571