Authors:
GRAY DC
BUTTERBAUGH JW
HIATT CF
LAWING AS
SAWIN HH
Citation: Dc. Gray et al., PHOTOCHEMICAL DRY-ETCHING OF DOPED AND UNDOPED SILICON-OXIDES, Journal of the Electrochemical Society, 142(11), 1995, pp. 3859-3863
Citation: Dc. Gray et al., REDEPOSITION KINETICS IN FLUOROCARBON PLASMA-ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 354-364
Citation: Jc. Arnold et al., INFLUENCE OF REACTANT TRANSPORT ON FLUORINE REACTIVE ION ETCHING OF DEEP TRENCHES IN SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2071-2080
Citation: Dc. Gray et al., PHENOMENOLOGICAL MODELING OF ION-ENHANCED SURFACE KINETICS IN FLUORINE-BASED PLASMA-ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1243-1257