Authors:
ACHTZIGER N
FORKELWIRTH D
GRILLENBERGER J
LICHT T
WITTHUHN W
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Citation: N. Achtziger et al., HYDROGEN PASSIVATION OF SILICON-CARBIDE BY LOW-ENERGY ION-IMPLANTATION, Applied physics letters, 73(7), 1998, pp. 945-947
Citation: N. Achtziger et al., BAND-GAP STATES OF V AND CR IN 6H-SILICON CARBIDE, Applied physics A: Materials science & processing, 65(3), 1997, pp. 329-331
Authors:
LICHT T
ACHTZIGER N
FORKELWIRTH D
FREITAG K
GRILLENBERGER J
KALTENHAUSER M
REISLOHNER U
RUB M
UHRMACHER M
WITTHUHN W
Citation: T. Licht et al., HAFNIUM, CADMIUM AND INDIUM IMPURITIES IN 4H-SIC OBSERVED BY PERTURBED-ANGULAR-CORRELATION SPECTROSCOPY, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1436-1439