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Results:
1-7
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Results: 7
Authors:
FEURPRIER Y
CARDINAUD C
GROLLEAU B
TURBAN G
Citation: Y. Feurprier et al., PROPOSAL FOR AN ETCHING MECHANISM OF INP IN CH4-H-2 MIXTURES BASED ONPLASMA DIAGNOSTICS AND SURFACE-ANALYSIS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1552-1559
Authors:
NICOLAZO F
GOULLET A
GRANIER A
VALLEE C
TURBAN G
GROLLEAU B
Citation: F. Nicolazo et al., STUDY OF OXYGEN TEOS PLASMAS AND THIN SIOX FILMS OBTAINED IN AN HELICON DIFFUSION REACTOR/, Surface & coatings technology, 98(1-3), 1998, pp. 1578-1583
Authors:
FEURPRIER Y
CARDINAUD C
GROLLEAU B
TURBAN G
Citation: Y. Feurprier et al., ETCH PRODUCT IDENTIFICATION DURING CH4-H-2 RIE OF INP USING MASS-SPECTROMETRY, Plasma sources science & technology, 6(4), 1997, pp. 561-568
Authors:
GRANIER A
NICOLAZO F
VALLEE C
GOULLET A
TURBAN G
GROLLEAU B
Citation: A. Granier et al., DIAGNOSTICS IN O-2 HELICON PLASMAS FOR SIO2 DEPOSITION, Plasma sources science & technology, 6(2), 1997, pp. 147-156
Authors:
ROYER J
TESSIER PY
GROLLEAU B
TURBAN G
Citation: J. Royer et al., NEON ION-BEAM-INDUCED SURFACE-REACTIONS OF SF6 ADSORBED MOLECULES WITH SILICON AT LOW-TEMPERATURE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(1), 1996, pp. 234-239
Authors:
COUCHMAN N
PACIFICO C
TURBAN G
GROLLEAU B
Citation: N. Couchman et al., INSITU XPS ANALYSIS OF THE TUNGSTEN SUBLAYER INTERFACE AFTER SF6 BASED REACTIVE ION ETCHING, Applied surface science, 70-1, 1993, pp. 613-618
Authors:
FOURCHES N
TURBAN G
GROLLEAU B
Citation: N. Fourches et al., STUDY OF DLC SILICON INTERFACES BY XPS AND INSITU ELLIPSOMETRY, Applied surface science, 68(1), 1993, pp. 149-160
Risultati:
1-7
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