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Results: 1-9 |
Results: 9
A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION
Authors: MARCHAND B GHIBAUDO G BALESTRA F GUEGAN G DELEONIBUS S
Citation: B. Marchand et al., A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION, Microelectronics and reliability, 38(6-8), 1998, pp. 1103-1107
BUILDING IN RELIABILITY WITH LATCH-UP, ESD AND HOT-CARRIER EFFECTS ON0.25 MU-M CMOS TECHNOLOGY
Authors: LEROUX C SALOME P REIMBOLD C BLACHIER D GUEGAN G BONIS M
Citation: C. Leroux et al., BUILDING IN RELIABILITY WITH LATCH-UP, ESD AND HOT-CARRIER EFFECTS ON0.25 MU-M CMOS TECHNOLOGY, Microelectronics and reliability, 38(10), 1998, pp. 1547-1552
LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18-MU-M SI CMOS TRANSISTORS
Authors: BOUTCHACHA T GHIBAUDO G GUEGAN G SKOTNICKI T
Citation: T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18-MU-M SI CMOS TRANSISTORS, Microelectronics and reliability, 37(10-11), 1997, pp. 1599-1602
LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.25 MU-M SI CMOS TRANSISTORS
Authors: BOUTCHACHA T GHIBAUDO G GUEGAN G HAOND M
Citation: T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.25 MU-M SI CMOS TRANSISTORS, Journal of non-crystalline solids, 216, 1997, pp. 192-197
A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4051-4054
A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/, Microelectronic engineering, 30(1-4), 1996, pp. 459-462
WRITING FOR TEL-QUEL
Authors: GUEGAN G
Citation: G. Guegan, WRITING FOR TEL-QUEL, L'Infini, (49-50), 1995, pp. 211-212
COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES
Authors: BENISTANT F MONDON F MARTIN F GUEGAN G
Citation: F. Benistant et al., COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 105-108
LOW-FREQUENCY NOISE AND RANDOM TELEGRAPH SIGNALS IN 0.35-MU-M SILICONCMOS DEVICES
Authors: ROUXDITBUISSON O GHIBAUDO G BRINI J LOHSE C GUEGAN G
Citation: O. Rouxditbuisson et al., LOW-FREQUENCY NOISE AND RANDOM TELEGRAPH SIGNALS IN 0.35-MU-M SILICONCMOS DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 177-180
Risultati: 1-9 |