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RAKOVICH YP
GURSKII AL
SMAL AS
GLADYSHCHUK AA
KHAMADI K
Citation: Yp. Rakovich et al., STRUCTURE OF THE FREE-EXCITON LUMINESCENCE BAND OF HETEROEPITAXIAL ZNSE GAAS LAYERS/, Physics of the solid state, 40(5), 1998, pp. 812-813
Authors:
GURSKII AL
LUTSENKO EV
YABLONSKII GP
HAMADEH H
KALISCH H
SCHINELLER B
HEUKEN M
Citation: Al. Gurskii et al., OPTICAL-PROPERTIES AND LASING OF ZNMGSSE ZNSSE/ZNSE HETEROSTRUCTURES GROWN BY MOVPE/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 22-25
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
SCHINELLER B
GUTTZEIT A
SCHON O
HEUKEN M
HEIME K
BECCARD R
SCHMITZ D
JUERGENSEN H
Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228
Authors:
GURSKII AL
RAKOVICH YP
KARPUK MM
GLADYSHCHUK AA
YABLONSKII GP
HAMADEH H
TAUDT W
HEUKEN M
Citation: Al. Gurskii et al., STRUCTURE OF FREE-EXCITON LUMINESCENCE SPECTRA IN HETEROEPITAXIAL ZNSE GAAS/, Journal of crystal growth, 185, 1998, pp. 1100-1104
Authors:
KALISCH H
HAMADEH H
MULLER J
YABLONSKII GP
GURSKII AL
WOITOK J
XU J
HEUKEN M
Citation: H. Kalisch et al., MOVPE OF ZNMGSSE HETEROSTRUCTURES FOR OPTICALLY PUMPED BLUE-GREEN LASERS, Journal of electronic materials, 26(10), 1997, pp. 1256-1260
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
HAMADEH H
SOLLNER J
TAUDT W
HEUKEN M
Citation: Gp. Yablonskii et al., OPTICALLY-PUMPED LASING OF DOPED ZNSE EPITAXIAL LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Physica status solidi. a, Applied research, 159(2), 1997, pp. 543-557
Authors:
GURSKII AL
MARKO IP
YUVCHENKO VN
YABLONSKII GP
HAMADEH H
TAUDT W
SOLLNER J
KALISCH H
HEUKEN M
Citation: Al. Gurskii et al., NEAR-BAND-EDGE PHOTOLUMINESCENCE OF MOVPE-GROWN UNDOPED AND NITROGEN-DOPED ZNSE, Journal of crystal growth, 174(1-4), 1997, pp. 757-762
Authors:
GURSKII AL
TAUDT W
LAMPE S
HAMADEH H
SAUERLANDER F
GERMAIN M
BASILAVECCHIA M
EVRARD R
YABLONSKII GP
HEUKEN M
Citation: Al. Gurskii et al., OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR, Journal of crystal growth, 170(1-4), 1997, pp. 533-536
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GURSKII AL
GAVRILENKO AN
LUTSENKO EV
YABLONSKII GP
TAUDT W
HAMADEH H
WACHTENDORF B
SOLLNER J
SCHMORANZER J
HEUKEN M
Citation: Al. Gurskii et al., TEMPERATURE AND EXCITATION DEPENDENT PHOTOLUMINESCENCE OF UNDOPED ANDNITROGEN-DOPED ZNSE EPILAYERS, Physica status solidi. b, Basic research, 193(1), 1996, pp. 257-267
Authors:
GURSKII AL
LUTSENKO EV
YABLONSKII GP
KOZLOVSKY VI
KRYSA AB
SOLLNER J
SCHOLL M
HAMADEH H
HEUKEN M
Citation: Al. Gurskii et al., PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE OF ZNSSE QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 518-522
Authors:
GURSKII AL
VAKARELSKA K
TAUDT W
WACHTENDORF B
SOLLNER J
WAHID A
HEUKEN M
Citation: Al. Gurskii et al., OXYGEN AND TELLURIUM IMPURITIES IN ZINC SELENIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 592-598
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GURSKII AL
GRUZINSKII VV
GAVRILENKO AN
KULAK II
MITSKOVETS AI
YABLONSKII GP
SCHOLL M
SOLLNER J
HEUKEN M
Citation: Al. Gurskii et al., ELECTRON-BEAM-PUMPED LASING IN ZNSE EPITAXIAL LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 77(10), 1995, pp. 5394-5397
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TAUDT W
WACHTENDORF B
BECCARD R
WAHID A
HEUKEN M
GURSKII AL
VAKARELSKA K
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND NITROGEN DOPING OF ZNSE USING DIETHYLZINC AND DITERTIARYBUTYLSELENIDE IN A PLASMA-STIMULATED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM, Journal of crystal growth, 145(1-4), 1994, pp. 582-588