Authors: YABLONSKII GP GURSKII AL LUTSENKO EV MARKO IP SCHINELLER B GUTTZEIT A SCHON O HEUKEN M HEIME K BECCARD R SCHMITZ D JUERGENSEN H

Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228

Authors: SCHINELLER B GUTTZEIT A VERTOMMEN F SCHON O HEUKEN M HEIME K BECCARD R

Citation: B. Schineller et al., LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 190, 1998, pp. 798-802