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Citation: Gv. Gadiyak, Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects, THIN SOL FI, 350(1-2), 1999, pp. 147-152
Authors:
Gadiyak, GV
Gadiyak, VG
Kosinova, ML
Salman, EG
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