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Results: 1-7 |
Results: 7
Boron and aluminium doping in SiC and its passivation by hydrogen
Authors: Deak, P Aradi, B Gali, A
Citation: P. Deak et al., Boron and aluminium doping in SiC and its passivation by hydrogen, J PHYS-COND, 13(40), 2001, pp. 9019-9026
Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202
Authors: Aradi, B Gali, A Deak, P Lowther, JE Son, NT Janzen, E Choyke, WJ
Citation: B. Aradi et al., Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202, PHYS REV B, 6324(24), 2001, pp. 5202
Phosphorus-related deep donor in SiC
Authors: Gali, A Deak, P Briddon, PR Devaty, RP Choyke, WJ
Citation: A. Gali et al., Phosphorus-related deep donor in SiC, PHYS REV B, 61(19), 2000, pp. 12602-12604
Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC
Authors: Gali, A Aradi, B Deak, P Choyke, WJ Son, NT
Citation: A. Gali et al., Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC, PHYS REV L, 84(21), 2000, pp. 4926-4929
Boron-vacancy complex in SiC
Authors: Gali, A Deak, P Devaty, RP Choyke, WJ
Citation: A. Gali et al., Boron-vacancy complex in SiC, PHYS REV B, 60(15), 1999, pp. 10620-10623
Theoretical investigation of the oxygen vacancies in beta-Ga2O3
Authors: Hajnal, Z Gali, A Miro, J Deak, P
Citation: Z. Hajnal et al., Theoretical investigation of the oxygen vacancies in beta-Ga2O3, PHYS ST S-A, 171(2), 1999, pp. R5-R6
The spin state of the neutral silicon vacancy in 3C-SiC
Authors: Deak, P Miro, J Gali, A Udvardi, L Overhof, H
Citation: P. Deak et al., The spin state of the neutral silicon vacancy in 3C-SiC, APPL PHYS L, 75(14), 1999, pp. 2103-2105
Risultati: 1-7 |