Authors:
Giri, PK
Coffa, S
Raineri, V
Privitera, V
Galvagno, G
La Ferla, A
Rimini, E
Citation: Pk. Giri et al., Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon, J APPL PHYS, 89(8), 2001, pp. 4310-4317
Authors:
Giri, PK
Galvagno, G
La Ferla, A
Rimini, E
Coffa, S
Raineri, V
Citation: Pk. Giri et al., Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants, MAT SCI E B, 71, 2000, pp. 186-191