Authors: Ougazzaden, A Rao, E Sermage, B Leprince, L Gauneau, M

Citation: A. Ougazzaden et al., High-quality InGaAsN growth by metalorganic vapor-phase epitaxy using nitrogen carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors, JPN J A P 1, 38(2B), 1999, pp. 1019-1021

Authors: Kechouane, M Beldi, N Mouheb, O Mohammed-Brahim, T Barriere, AS L'Haridon, H Gauneau, M

Citation: M. Kechouane et al., Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering, PHIL MAG B, 79(8), 1999, pp. 1205-1211