Authors: Otte, K Lippold, G Hirsch, D Gebhardt, RK Chasse, T

Citation: K. Otte et al., Conductivity type conversion of p-type CuInSe2 due to hydrogenation, APPL SURF S, 179(1-4), 2001, pp. 203-208

Authors: Preobrajenski, AB Gebhardt, RK Uhlig, I Chasse, T

Citation: Ab. Preobrajenski et al., Two types of sulfur-induced (2 x 1) reconstructions on InP(001), SURF SCI, 481(1-3), 2001, pp. 1-12

Authors: Gebhardt, RK Preobrajenski, AB Chasse, T

Citation: Rk. Gebhardt et al., Core and valence-level photoemission study of the InP(001)-(2x1)S surface:Surface structure and electronic states, PHYS REV B, 61(15), 2000, pp. 9997-10000

Authors: Preobrajenski, AB Schomann, S Gebhardt, RK Chasse, T

Citation: Ab. Preobrajenski et al., Passivation of the Ge/InP(110) interface by As interlayers: Interface reactions and band offsets, J VAC SCI B, 18(4), 2000, pp. 1973-1979

Authors: Gebhardt, RK Sloboshanin, S Schaefer, JA Chasse, T

Citation: Rk. Gebhardt et al., Arsenic interlayers at the Sn/InP(001) interface, APPL SURF S, 142(1-4), 1999, pp. 94-98

Authors: Sloboshanin, S Gebhardt, RK Schaefer, JA Chasse, T

Citation: S. Sloboshanin et al., Photoemission study of the interface reaction between Ag and H2S treated InP(001), SURF SCI, 431(1-3), 1999, pp. 252-259