Authors:
Mahan, AH
Xu, Y
Williamson, DL
Beyer, W
Perkins, JD
Vanecek, M
Gedvilas, LM
Nelson, BP
Citation: Ah. Mahan et al., Structural properties of hot wire a-Si : H films deposited at rates in excess of 100 A/s, J APPL PHYS, 90(10), 2001, pp. 5038-5047
Citation: Rk. Ahrenkiel et al., Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates, APPL PHYS L, 78(8), 2001, pp. 1092-1094
Authors:
Nelson, BP
Xu, YQ
Webb, JD
Mason, A
Reedy, RC
Gedvilas, LM
Lanford, WA
Citation: Bp. Nelson et al., Techniques for measuring the composition of hydrogenated amorphous silicon-germanium alloys, J NON-CRYST, 266, 2000, pp. 680-684
Citation: Ah. Mahan et al., Si-H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction, J APPL PHYS, 87(4), 2000, pp. 1650-1658