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Results: 1-13 |
Results: 13
Multilayer relaxation of Cu(331) - art. no. 115401
Authors: Geng, WT Freeman, AJ
Citation: Wt. Geng et Aj. Freeman, Multilayer relaxation of Cu(331) - art. no. 115401, PHYS REV B, 6411(11), 2001, pp. 5401
Coordination and chemical effects on the structural, electronic, and magnetic properties in Mn pnictides - art. no. 085204
Authors: Continenza, A Picozzi, S Geng, WT Freeman, AJ
Citation: A. Continenza et al., Coordination and chemical effects on the structural, electronic, and magnetic properties in Mn pnictides - art. no. 085204, PHYS REV B, 6408(8), 2001, pp. 5204
Electronic and magnetic properties of Ga1-xMnxAs: Role of Mn defect bands - art. no. 035207
Authors: Zhao, YJ Geng, WT Park, KT Freeman, AJ
Citation: Yj. Zhao et al., Electronic and magnetic properties of Ga1-xMnxAs: Role of Mn defect bands - art. no. 035207, PHYS REV B, 6403(3), 2001, pp. 5207
Multilayer relaxation and magnetism of a high-index transition metal surface: Fe(310) - art. no. 245401
Authors: Geng, WT Kim, M Freeman, AJ
Citation: Wt. Geng et al., Multilayer relaxation and magnetism of a high-index transition metal surface: Fe(310) - art. no. 245401, PHYS REV B, 6324(24), 2001, pp. 5401
Magnetism of chalcopyrite semiconductors: Cd1-xMnxGeP2 - art. no. 201202
Authors: Zhao, YJ Geng, WT Freeman, AJ Oguchi, T
Citation: Yj. Zhao et al., Magnetism of chalcopyrite semiconductors: Cd1-xMnxGeP2 - art. no. 201202, PHYS REV B, 6320(20), 2001, pp. 1202
Influence of alloying additions on grain boundary cohesion of transition metals: First-principles determination and its phenomenological extension - art. no. 165415
Authors: Geng, WT Freeman, AJ Olson, GB
Citation: Wt. Geng et al., Influence of alloying additions on grain boundary cohesion of transition metals: First-principles determination and its phenomenological extension - art. no. 165415, PHYS REV B, 6316(16), 2001, pp. 5415
Atomic displacements at a Sigma 3(111) grain boundary in BaTiO3: A first-principles determination - art. no. 060101
Authors: Geng, WT Zhao, YJ Freeman, AJ Delley, B
Citation: Wt. Geng et al., Atomic displacements at a Sigma 3(111) grain boundary in BaTiO3: A first-principles determination - art. no. 060101, PHYS REV B, 6305(6), 2001, pp. 0101
Magnetism at high-index transition-metal surfaces and the effect of metalloid impurities: Ni(210) - art. no. 064427
Authors: Geng, WT Freeman, AJ Wu, RQ
Citation: Wt. Geng et al., Magnetism at high-index transition-metal surfaces and the effect of metalloid impurities: Ni(210) - art. no. 064427, PHYS REV B, 6305(6), 2001, pp. 4427
Influence of alloying additions on the impurity induced grain boundary embrittlement
Authors: Geng, WT Freeman, AJ Olson, GB
Citation: Wt. Geng et al., Influence of alloying additions on the impurity induced grain boundary embrittlement, SOL ST COMM, 119(10-11), 2001, pp. 585-590
The effect of Li, He and Ca on grain boundary cohesive strength in Ni
Authors: Smith, RW Geng, WT Geller, CB Wu, R Freeman, AJ
Citation: Rw. Smith et al., The effect of Li, He and Ca on grain boundary cohesive strength in Ni, SCR MATER, 43(10), 2000, pp. 957-961
Effect of Mo and Pd on the grain-boundary cohesion of Fe
Authors: Geng, WT Freeman, AJ Wu, R Olson, GB
Citation: Wt. Geng et al., Effect of Mo and Pd on the grain-boundary cohesion of Fe, PHYS REV B, 62(10), 2000, pp. 6208-6214
First-principles calculations for the structural and magnetic properties of ordered NiFe(001) thin films with and without a Ta overlayer
Authors: Kim, M Geng, WT Freeman, AJ Zhong, LP Fernandez-de-Castro, J
Citation: M. Kim et al., First-principles calculations for the structural and magnetic properties of ordered NiFe(001) thin films with and without a Ta overlayer, J APPL PHYS, 87(9), 2000, pp. 5735-5737
Embrittling and strengthening effects of hydrogen, boron, and phosphorus on a Sigma 5 nickel grain boundary
Authors: Geng, WT Freeman, AJ Wu, R Geller, CB Raynolds, JE
Citation: Wt. Geng et al., Embrittling and strengthening effects of hydrogen, boron, and phosphorus on a Sigma 5 nickel grain boundary, PHYS REV B, 60(10), 1999, pp. 7149-7155
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