Authors: Ghosh, VJ Alatalo, M Asoka-Kumar, P Nielsen, B Lynn, KG Kruseman, AC Mijnarends, PE

Citation: Vj. Ghosh et al., Calculation of the Doppler broadening of the electron-positron annihilation radiation in defect-free bulk materials, PHYS REV B, 61(15), 2000, pp. 10092-10099

Authors: Ghosh, VJ Nielsen, B Friessnegg, T

Citation: Vj. Ghosh et al., Identifying open-volume defects in doped and undoped perovskite-type LaCoO3, PbTiO3, and BaTiO3, PHYS REV B, 61(1), 2000, pp. 207-212

Authors: Ghosh, VJ Nielsen, B Kruseman, AC Mijnarends, PR van Veen, A Lynn, KG

Citation: Vj. Ghosh et al., The effect of the detector resolution on the Doppler broadening measurements of both valence and core electron-positron annihilation, APPL SURF S, 149(1-4), 1999, pp. 234-237

Authors: Petkov, MP Weber, MH Lynn, KG Crandall, RS Ghosh, VJ

Citation: Mp. Petkov et al., Direct evidence of phosphorus-defect complexes in n-type amorphous siliconand hydrogenated amorphous silicon, PHYS REV L, 82(19), 1999, pp. 3819-3822

Authors: Nielsen, B Lewis, LH Friessnegg, T Ghosh, VJ Kramer, MJ McCallum, RW Dennis, K

Citation: B. Nielsen et al., Atomic structure of the amorphous state of TiC-modified Nd2Fe14B as revealed by positron annihilation spectroscopy, J APPL PHYS, 85(8), 1999, pp. 5929-5931