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Citation: Kk. Rim et al., Fabrication and analysis of deep submicron strained-Si N-MOSFET's, IEEE DEVICE, 47(7), 2000, pp. 1406-1415

Authors: Gibbons, JF

Citation: Jf. Gibbons, The role of Stanford University - A dean's reflections, SILICON VALLEY EDGE, 2000, pp. 200-217

Authors: Singh, DV Mitchell, TO Hoyt, JL Gibbons, JF Johnson, NM Gotz, WK

Citation: Dv. Singh et al., Effect of grown-in biaxial strain on deep level defects in Si1-yCy/Si epitaxial heterostructures, PHYSICA B, 274, 1999, pp. 681-684

Authors: Singh, DV Rim, K Mitchell, TO Hoyt, JL Gibbons, JF

Citation: Dv. Singh et al., Measurement of the conduction band offsets in Si/Si1-x-yGexCy and Si/Si1-yCy heterostructures using metal-oxide-semiconductor capacitors, J APPL PHYS, 85(2), 1999, pp. 978-984

Authors: Singh, DV Rim, K Mitchell, TO Hoyt, JL Gibbons, JF

Citation: Dv. Singh et al., Admittance spectroscopy analysis of the conduction band offsets in Si/Si1-x-yGexCy and Si/Si1-yCy heterostructures, J APPL PHYS, 85(2), 1999, pp. 985-993