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Results: 1-9 |
Results: 9
High-quality GaAs-related lateral junctions on Si by conformal growth
Authors: Gil-Lafon, E Videcoq, A Napierala, J Castelluci, D Pimpinelli, A Gerard, B Jimenez, J Avella, M
Citation: E. Gil-lafon et al., High-quality GaAs-related lateral junctions on Si by conformal growth, OPT MATER, 17(1-2), 2001, pp. 267-270
Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE
Authors: Napierala, J Gil-Lafon, E Castelluci, D Pimpinelli, A Gerard, B
Citation: J. Napierala et al., Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE, OPT MATER, 17(1-2), 2001, pp. 315-318
Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques
Authors: Martinez, O Avella, M de la Puente, E Gonzalez, MA Jimenez, J Gerard, B Gil-Lafon, E
Citation: O. Martinez et al., Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques, MAT SCI E B, 80(1-3), 2001, pp. 197-201
Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies
Authors: Gil-Lafon, E Napierala, J Castelluci, D Pimpinelli, A Cadoret, R Gerard, B
Citation: E. Gil-lafon et al., Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies, J CRYST GR, 222(3), 2001, pp. 482-496
Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen
Authors: Aujol, E Napierala, J Trassoudaine, A Gil-Lafon, E Cadoret, R
Citation: E. Aujol et al., Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen, J CRYST GR, 222(3), 2001, pp. 538-548
Self-doping near the seed/layer interface in conformal GaAs layers grown on Si
Authors: Ardila, AM Martinez, O Avella, M Jimenez, J Gerard, B Napierala, J Gil-Lafon, E
Citation: Am. Ardila et al., Self-doping near the seed/layer interface in conformal GaAs layers grown on Si, APPL PHYS L, 79(9), 2001, pp. 1270-1272
Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors
Authors: Philippens, M Oligschlaeger, R Gerard, B Rushworth, S Gil-Lafon, E Napierala, J Jimenez, J Heime, K
Citation: M. Philippens et al., Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors, J CRYST GR, 221, 2000, pp. 225-230
Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman
Authors: Martinez, O Avella, M de la Puente, E Jimenez, J Gerard, B Gil-Lafon, E
Citation: O. Martinez et al., Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman, J CRYST GR, 210(1-3), 2000, pp. 198-202
Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE
Authors: Goumet, E Gil-Lafon, E Cadoret, R Castelluci, D Leymarie, J Vasson, AM Vasson, A Bideux, L Gruzza, B
Citation: E. Goumet et al., Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE, APPL SURF S, 142(1-4), 1999, pp. 637-641
Risultati: 1-9 |