Authors:
Napierala, J
Gil-Lafon, E
Castelluci, D
Pimpinelli, A
Gerard, B
Citation: J. Napierala et al., Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE, OPT MATER, 17(1-2), 2001, pp. 315-318
Authors:
Martinez, O
Avella, M
de la Puente, E
Gonzalez, MA
Jimenez, J
Gerard, B
Gil-Lafon, E
Citation: O. Martinez et al., Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques, MAT SCI E B, 80(1-3), 2001, pp. 197-201
Authors:
Gil-Lafon, E
Napierala, J
Castelluci, D
Pimpinelli, A
Cadoret, R
Gerard, B
Citation: E. Gil-lafon et al., Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies, J CRYST GR, 222(3), 2001, pp. 482-496
Authors:
Philippens, M
Oligschlaeger, R
Gerard, B
Rushworth, S
Gil-Lafon, E
Napierala, J
Jimenez, J
Heime, K
Citation: M. Philippens et al., Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors, J CRYST GR, 221, 2000, pp. 225-230
Authors:
Martinez, O
Avella, M
de la Puente, E
Jimenez, J
Gerard, B
Gil-Lafon, E
Citation: O. Martinez et al., Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman, J CRYST GR, 210(1-3), 2000, pp. 198-202