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Results: 1-9 |
Results: 9
Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry
Authors: Giri, PK Tripurasundari, S Raghavan, G Panigrahi, BK Magudapathy, P Nair, KGM Tyagi, AK
Citation: Pk. Giri et al., Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry, J APPL PHYS, 90(2), 2001, pp. 659-669
Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon
Authors: Giri, PK Coffa, S Raineri, V Privitera, V Galvagno, G La Ferla, A Rimini, E
Citation: Pk. Giri et al., Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon, J APPL PHYS, 89(8), 2001, pp. 4310-4317
Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon
Authors: Giri, PK Coffa, S Rimini, E
Citation: Pk. Giri et al., Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon, APPL PHYS L, 78(3), 2001, pp. 291-293
Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants
Authors: Giri, PK Galvagno, G La Ferla, A Rimini, E Coffa, S Raineri, V
Citation: Pk. Giri et al., Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants, MAT SCI E B, 71, 2000, pp. 186-191
Thermal stability of defect complexes due to high dose MeV implantation insilicon
Authors: Giri, PK Mohapatra, YN
Citation: Pk. Giri et Yn. Mohapatra, Thermal stability of defect complexes due to high dose MeV implantation insilicon, MAT SCI E B, 71, 2000, pp. 327-332
Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation
Authors: Giri, PK Mohapatra, YN
Citation: Pk. Giri et Yn. Mohapatra, Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation, SEMIC SCI T, 15(10), 2000, pp. 985-991
Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics ofdefects in heavy-ion-damaged silicon
Authors: Giri, PK Mohapatra, YN
Citation: Pk. Giri et Yn. Mohapatra, Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics ofdefects in heavy-ion-damaged silicon, PHYS REV B, 62(4), 2000, pp. 2496-2504
Evidence of metastability with athermal ionization from defect clusters inion-damaged silicon
Authors: Giri, PK Mohapatra, YN
Citation: Pk. Giri et Yn. Mohapatra, Evidence of metastability with athermal ionization from defect clusters inion-damaged silicon, PHYS REV B, 62(24), 2000, pp. 16561-16565
Oxidation induced precipitation in Al implanted epitaxial silicon
Authors: La Ferla, A Galvagno, G Giri, PK Franzo, G Rimini, E Raineri, V Gasparotto, A Cali, D
Citation: A. La Ferla et al., Oxidation induced precipitation in Al implanted epitaxial silicon, J APPL PHYS, 88(7), 2000, pp. 3988-3992
Risultati: 1-9 |