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Results: 1-8 |
Results: 8
Nonequilibrium electron distribution in the presence of Kondo impurities -art. no. 033301
Authors: Goppert, G Grabert, H
Citation: G. Goppert et H. Grabert, Nonequilibrium electron distribution in the presence of Kondo impurities -art. no. 033301, PHYS REV B, 6403(3), 2001, pp. 3301
Charge fluctuations in the single-electron box - art. no. 125307
Authors: Goppert, G Grabert, H
Citation: G. Goppert et H. Grabert, Charge fluctuations in the single-electron box - art. no. 125307, PHYS REV B, 6312(12), 2001, pp. 5307
Single electron tunneling at large conductance: The semiclassical approach
Authors: Goppert, G Grabert, H
Citation: G. Goppert et H. Grabert, Single electron tunneling at large conductance: The semiclassical approach, EUR PHY J B, 16(4), 2000, pp. 687-704
Transport and Coulomb blockade in carbon nanotubes
Authors: Komnik, A Goppert, G Egger, R Grabert, H
Citation: A. Komnik et al., Transport and Coulomb blockade in carbon nanotubes, PHYSICA B, 284, 2000, pp. 1748-1749
Conductance of the single-electron transistor in the strong tunneling regime
Authors: Goppert, G Hupper, B Grabert, H
Citation: G. Goppert et al., Conductance of the single-electron transistor in the strong tunneling regime, PHYSICA B, 284, 2000, pp. 1792-1793
Conductance of the single-electron transistor for arbitrary tunneling strength
Authors: Goppert, G Hupper, B Grabert, H
Citation: G. Goppert et al., Conductance of the single-electron transistor for arbitrary tunneling strength, PHYS REV B, 62(15), 2000, pp. 9955-9958
Frequency-dependent conductance of a tunnel junction
Authors: Goppert, G Grabert, H
Citation: G. Goppert et H. Grabert, Frequency-dependent conductance of a tunnel junction, CR AC S IIB, 327(9), 1999, pp. 885-892
Coulomb charging effects for finite channel number
Authors: Goppert, G Grabert, H Beck, C
Citation: G. Goppert et al., Coulomb charging effects for finite channel number, EUROPH LETT, 45(2), 1999, pp. 249-255
Risultati: 1-8 |